TY - JOUR
T1 - Surfactant-assisted synthesis of direct Z-scheme AgBr/β-Ag2WO4 heterostructures with enhanced visible-light-driven photocatalytic activities
AU - Yin, Hongfei
AU - Zhang, Min
AU - Yao, Jiacheng
AU - Luo, Yuting
AU - Li, Pengfei
AU - Liu, Xiaoheng
AU - Chen, Shenming
N1 - Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2020/1
Y1 - 2020/1
N2 - Compared with the conventional two-step ion exchange method used for the fabrication of AgBr/β-Ag2WO4 heterostructures, herein, a series of AgBr/β-Ag2WO4 direct Z-scheme heterostructures were efficiently fabricated via a simple surfactant-assisted one-step precipitation strategy. The phase structure, morphology, chemical composition as well as photocatalytic mechanism of the as-obtained AgBr/β-Ag2WO4 heterostructures were systematically characterized by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Ultraviolet–Visible diffuse reflectance spectra (UV–vis DRS), X-ray photoelectron spectroscopy (XPS), Photoluminescence spectrum (PL), photoelectrochemical tests. Photocatalytic degradation of Rhodamine (RhB) under visible light was carried out as a probe to assess its photocatalytic activity. The result indicates that AgBr/β-Ag2WO4-30% exhibits the highest photocatalytic activity, which is approximately 1.7 and 135.9 times as high as that of pure AgBr and pure β-Ag2WO4, respectively. The pathway of charge carriers separation and transfer in the AgBr/β-Ag2WO4 heterostructures and the direct Z-scheme mechanism were depicted in details based on the systematic characterizations and measurements. The enhancement of the photocatalytic performances of the as-prepared AgBr/β-Ag2WO4 heterostructures are mainly attributed to the larger specific surface area and Z-scheme system formed between these two semiconductors, leading to the spatial separation of the photoinduced electron and hole. This work may provide a new sight to understand the mechanism of AgBr/β-Ag2WO4 heterostructures, which is direct Z-scheme heterojunctions rather than type-II heterojunctions.
AB - Compared with the conventional two-step ion exchange method used for the fabrication of AgBr/β-Ag2WO4 heterostructures, herein, a series of AgBr/β-Ag2WO4 direct Z-scheme heterostructures were efficiently fabricated via a simple surfactant-assisted one-step precipitation strategy. The phase structure, morphology, chemical composition as well as photocatalytic mechanism of the as-obtained AgBr/β-Ag2WO4 heterostructures were systematically characterized by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Ultraviolet–Visible diffuse reflectance spectra (UV–vis DRS), X-ray photoelectron spectroscopy (XPS), Photoluminescence spectrum (PL), photoelectrochemical tests. Photocatalytic degradation of Rhodamine (RhB) under visible light was carried out as a probe to assess its photocatalytic activity. The result indicates that AgBr/β-Ag2WO4-30% exhibits the highest photocatalytic activity, which is approximately 1.7 and 135.9 times as high as that of pure AgBr and pure β-Ag2WO4, respectively. The pathway of charge carriers separation and transfer in the AgBr/β-Ag2WO4 heterostructures and the direct Z-scheme mechanism were depicted in details based on the systematic characterizations and measurements. The enhancement of the photocatalytic performances of the as-prepared AgBr/β-Ag2WO4 heterostructures are mainly attributed to the larger specific surface area and Z-scheme system formed between these two semiconductors, leading to the spatial separation of the photoinduced electron and hole. This work may provide a new sight to understand the mechanism of AgBr/β-Ag2WO4 heterostructures, which is direct Z-scheme heterojunctions rather than type-II heterojunctions.
KW - AgBr/β-AgWO
KW - Direct Z-scheme
KW - Heterostructures
KW - Photocatlytic activity
UR - https://www.scopus.com/pages/publications/85071484144
U2 - 10.1016/j.mssp.2019.104688
DO - 10.1016/j.mssp.2019.104688
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AN - SCOPUS:85071484144
SN - 1369-8001
VL - 105
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 104688
ER -