Sub-10 nm multicomponent oxide with forming-free resistive switching characteristics

This paper reports on the resistive switching (RS) characteristics of a multicomponent oxide memory device based on a 9-nm amorphous active layer of (HfCuAlTi)O_x. The proposed device exhibits forming-free unipolar RS properties with relatively low operating voltage (<1.52 V), high resistance ratio, and stable retention. The current density of ~1.17 × 10⁻¹ nA/μm² in the ON state is nearly three orders of magnitude higher than in the OFF state, as measured using a conductive atomic force microscope. These results confirm that resistive switching is dominated by oxygen vacancies providing filamentary conduction through the film.