@inproceedings{2f0dc55f8ca2424e872b013745168031,
title = "Self-aligned amorphous indium-gallium-zinc-oxide thin-film transistor using a two-mask process without etching-stop layer",
abstract = "Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure, which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.",
author = "Fan, \{Ching Lin\} and Shang, \{Ming Chi\} and Li, \{Bo Jyun\} and Wang, \{Shea Jue\} and Lee, \{Win Der\}",
year = "2014",
doi = "10.1109/AM-FPD.2014.6867147",
language = "???core.languages.en\_GB???",
isbn = "9784863483958",
series = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "IEEE Computer Society",
pages = "129--132",
booktitle = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices",
note = "21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 ; Conference date: 02-07-2014 Through 04-07-2014",
}