Recovery behavior in amorphous silicon solar module at low temperature

Electrical performance of a light-induced degraded amorphous thin film (a-Si:H) module was investigated at various recovery temperature ranging from 25 to 65°C. Fill factor (FF) was proposed to describe the module performance due to its sensitivity to the resistance characteristics of module and environment parameters. The ground state of the a-Si:H module was 59.1% in fill factor, while an exponential increase in FF finally leaded to a saturated state around 60.6% with the increasing module temperature. Obviously, it is suggested that the recovery behavior of a-Si:H module occurs when heating up the module, and the performance itself is influenced by annealing parameters. Yet, a further assessment of the electrical parameters indicated that the increase of the FF was mainly dominated by the decrease of the series resistance (R_s).