摘要
This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.
| 原文 | English |
|---|---|
| 文章編號 | 5373911 |
| 頁(從 - 到) | 179-181 |
| 頁數 | 3 |
| 期刊 | IEEE Photonics Technology Letters |
| 卷 | 22 |
| 發行號 | 3 |
| DOIs | |
| 出版狀態 | Published - 1 2月 2010 |
文獻附註
Funding Information:Manuscript received July 29, 2009; revised November 09, 2009; accepted November 16, 2009. Current version published January 15, 2010. This work was supported by the National Science Council of the Republic of China, Taiwan, under Contract NSC 97-2221-E-027-114 and Contract NSC 98-2221-E-027-007-MY3.
指紋
深入研究「Polarization characteristics of quantum-dot vertical-cavity surface-emitting laser with light injection」主題。共同形成了獨特的指紋。引用此
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