Photocurrent properties of nanostructered ZnO/SiO₂/si photodiodes in magnetic fields

This study examines the optoelectronic characteristics and carrier transport model of a nanostructure p-ZnO/SiO₂ ultrathin interlayer/n-Si photodiode in various magnetic fields. The magneto-induced current in photodiode increases exponentially as the reverse bias and illumination flux increases. This is primarily the result of the magneto-optical multiplication effects. The absorption edges of photodiodes with applied magnetic fields of 0.1, 0.5, and 0.7 Tesla shifted from 370.5 nm to 370, 369, and 368.5 nm, respectively, while the photon energy shifts were approximately 4.52, 13.60, and 18.16 meV, respectively. These shifts are attributed to the interband magneto-optical absorption caused by Landau splitting of the band structure of nanostructure ZnO film in the presence of a magnetic field.