摘要
We fabricated high speed InAlAs avalanche photodiode without guard ring. It demonstrated the dark current of 1.9 nA and capacitance of 0.16 pF at 0.9 Vbr, and f3-dB of 10 GHz under different incident optical-powers.
| 原文 | English |
|---|---|
| 主出版物標題 | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
| 發行者 | Institute of Electrical and Electronics Engineers Inc. |
| ISBN(電子) | 9781943580927 |
| 出版狀態 | Published - 2021 |
| 事件 | 2021 Opto-Electronics and Communications Conference, OECC 2021 - Hong Kong, Hong Kong 持續時間: 3 7月 2021 → 7 7月 2021 |
出版系列
| 名字 | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
|---|
Conference
| Conference | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
|---|---|
| 國家/地區 | Hong Kong |
| 城市 | Hong Kong |
| 期間 | 3/07/21 → 7/07/21 |
文獻附註
Publisher Copyright:© 2021 OSA.
指紋
深入研究「Performance Characterization of High-Speed InAlAs Avalanche Photodiode with Double Passivation」主題。共同形成了獨特的指紋。引用此
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