Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

Lung Chien Chen; Chih Hung Hsu; Xiuyu Zhang; Jia Ren Wu

doi:10.1155/2014/959620

Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

Lung Chien Chen
, Chih Hung Hsu
, Xiuyu Zhang
, Jia Ren Wu

光電工程系

研究成果: 期刊貢獻 › 文章 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO² and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO² insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

原文	English
文章編號	959620
期刊	International Journal of Photoenergy
卷	2014
DOIs	https://doi.org/10.1155/2014/959620
出版狀態	Published - 2014

文獻附註

Publisher Copyright:
© 2014 Lung-Chien Chen et al.

UN SDG

此研究成果有助於以下永續發展目標

Affordable and clean energy

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10.1155/2014/959620

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AU - Chen, Lung Chien

AU - Hsu, Chih Hung

AU - Zhang, Xiuyu

AU - Wu, Jia Ren

PY - 2014

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N2 - ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

AB - ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

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Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

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