Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Chi Da Yang; Chong Long Ho; Ming Yuan Wu; Juh Yuh Su; Wen Jeng Ho; Meng Chyi Wu

doi:10.1016/S0038-1101(03)00130-8

Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Chi Da Yang
, Chong Long Ho
, Ming Yuan Wu
, Juh Yuh Su
, Wen Jeng Ho
, Meng Chyi Wu

光電工程系

研究成果: 期刊貢獻 › 文章 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

原文	English
頁（從 - 到）	1763-1767
頁數	5
期刊	Solid-State Electronics
卷	47
發行號	10
DOIs	https://doi.org/10.1016/S0038-1101(03)00130-8
出版狀態	Published - 10月 2003

文獻附註

Funding Information:
The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.

存取文件

10.1016/S0038-1101(03)00130-8

其它文件與鏈接

Link to publication in Scopus

引用此

@article{c3b809fd6138480fa879a48435d1e456,

title = "Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors",

abstract = "We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.",

keywords = "Distributed bragg reflector (DBR), Epitaxial lift-off (ELO), InGaAs p-i-n photodiode",

author = "Yang, \{Chi Da\} and Ho, \{Chong Long\} and Wu, \{Ming Yuan\} and Su, \{Juh Yuh\} and Ho, \{Wen Jeng\} and Wu, \{Meng Chyi\}",

note = "Funding Information: The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.",

year = "2003",

month = oct,

doi = "10.1016/S0038-1101(03)00130-8",

language = "???core.languages.en\_GB???",

volume = "47",

pages = "1763--1767",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "10",

}

TY - JOUR

T1 - Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

AU - Yang, Chi Da

AU - Ho, Chong Long

AU - Wu, Ming Yuan

AU - Su, Juh Yuh

AU - Ho, Wen Jeng

AU - Wu, Meng Chyi

N1 - Funding Information: The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.

PY - 2003/10

Y1 - 2003/10

N2 - We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

AB - We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

KW - Distributed bragg reflector (DBR)

KW - Epitaxial lift-off (ELO)

KW - InGaAs p-i-n photodiode

UR - https://www.scopus.com/pages/publications/0043095292

U2 - 10.1016/S0038-1101(03)00130-8

DO - 10.1016/S0038-1101(03)00130-8

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0043095292

SN - 0038-1101

VL - 47

SP - 1763

EP - 1767

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

摘要

文獻附註

存取文件

其它文件與鏈接

指紋

引用此