摘要
Chemical bath deposition (CBD) is a commonly used and inexpensive technique to deposit a variety of semiconductor and oxide thin films for a variety of different applications. In this work, a continuous flow microreactor was used to better control the reacting flux present during the CBD reaction by offering a better temporal resolution. High quality CdS films at various thicknesses could be obtained by using a flux that avoided the formation of nanoparticles. The chemistry and growth kinetics of CdS CBD were elucidated using this microreactor. The results suggest that HS- ions formed during the thiourea hydrolysis reaction are the dominant sulfide ion source responsible for the CdS deposition.
| 原文 | English |
|---|---|
| 頁(從 - 到) | H244-H247 |
| 期刊 | Electrochemical and Solid-State Letters |
| 卷 | 12 |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 2009 |
指紋
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