Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu; Chun Hu Cheng; Chia Chi Fan; Po Chun Chen; Chun Yen Chang; Min Hung Lee; Chien Liu; Shiang Shiou Yen; Hsiao Hsuan Hsu

doi:10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu
, Chun Hu Cheng
, Chia Chi Fan
, Po Chun Chen
, Chun Yen Chang
, Min Hung Lee
, Chien Liu
, Shiang Shiou Yen
, Hsiao Hsuan Hsu

材料及資源工程系

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

A nearly ideal subthreshold slope (SS_min ∼58mV/dec) and an ultralow off-state current of 10^-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔV_T window during endurance cycling may be affected by interface polarization fluctuation.

原文	English
主出版物標題	73rd Annual Device Research Conference, DRC 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	41-42
頁數	2
ISBN（電子）	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175543
出版狀態	Published - 3 8月 2015
事件	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States 持續時間: 21 6月 2015 → 24 6月 2015

出版系列

名字	Device Research Conference - Conference Digest, DRC
卷	2015-August
ISSN（列印）	1548-3770

Conference

Conference	73rd Annual Device Research Conference, DRC 2015
國家/地區	United States
城市	Columbus
期間	21/06/15 → 24/06/15

文獻附註

Publisher Copyright:
© 2015 IEEE.

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10.1109/DRC.2015.7175543

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Link to publication in Scopus

引用此

Chiu, Y. C., Cheng, C. H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M. H., Liu, C., Yen, S. S., & Hsu, H. H. (2015). Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 於 73rd Annual Device Research Conference, DRC 2015 (頁 41-42). 文章 7175543 (Device Research Conference - Conference Digest, DRC; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175543

Chiu, Yu Chien ; Cheng, Chun Hu ; Fan, Chia Chi 等. / Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 41-42 (Device Research Conference - Conference Digest, DRC).

@inproceedings{734497e375ca480fb9599f8b72fe32b9,

title = "Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope",

abstract = "A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.",

keywords = "Clocks, Fluctuations, High K dielectric materials, Logic gates, Switches, Transistors",

author = "Chiu, \{Yu Chien\} and Cheng, \{Chun Hu\} and Fan, \{Chia Chi\} and Chen, \{Po Chun\} and Chang, \{Chun Yen\} and Lee, \{Min Hung\} and Chien Liu and Yen, \{Shiang Shiou\} and Hsu, \{Hsiao Hsuan\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",

year = "2015",

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doi = "10.1109/DRC.2015.7175543",

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series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "73rd Annual Device Research Conference, DRC 2015",

}

Chiu, YC, Cheng, CH, Fan, CC, Chen, PC, Chang, CY, Lee, MH, Liu, C, Yen, SS & Hsu, HH 2015, Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 於 73rd Annual Device Research Conference, DRC 2015., 7175543, Device Research Conference - Conference Digest, DRC, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 41-42, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 21/06/15. https://doi.org/10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun Hu; Fan, Chia Chi 等.
73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; 卷 2015-August).

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

TY - GEN

T1 - Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

AU - Chiu, Yu Chien

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Chen, Po Chun

AU - Chang, Chun Yen

AU - Lee, Min Hung

AU - Liu, Chien

AU - Yen, Shiang Shiou

AU - Hsu, Hsiao Hsuan

PY - 2015/8/3

Y1 - 2015/8/3

N2 - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

AB - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

KW - Clocks

KW - Fluctuations

KW - High K dielectric materials

KW - Logic gates

KW - Switches

KW - Transistors

UR - https://www.scopus.com/pages/publications/84957667498

U2 - 10.1109/DRC.2015.7175543

DO - 10.1109/DRC.2015.7175543

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84957667498

T3 - Device Research Conference - Conference Digest, DRC

SP - 41

EP - 42

BT - 73rd Annual Device Research Conference, DRC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 73rd Annual Device Research Conference, DRC 2015

Y2 - 21 June 2015 through 24 June 2015

ER -

Chiu YC, Cheng CH, Fan CC, Chen PC, Chang CY, Lee MH 等. Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 於 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 41-42. 7175543. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

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