Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Zhi Wei Zheng; Hsiao Hsuan Hsu; Chun Hu Cheng; Po Chun Chen

doi:10.1002/pssr.201409039

Improved high-temperature switching characteristics of Y₂O₃/TiO_x resistive memory through carrier depletion effect

Zhi Wei Zheng
, Hsiao Hsuan Hsu
, Chun Hu Cheng
, Po Chun Chen

材料及資源工程系

研究成果: 期刊貢獻 › 文章 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We report a stacked Y₂O₃/TiO_x resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiO_x and the related carrier depletion effect.

原文	English
頁（從 - 到）	431-435
頁數	5
期刊	Physica Status Solidi - Rapid Research Letters
卷	8
發行號	5
DOIs	https://doi.org/10.1002/pssr.201409039
出版狀態	Published - 5月 2014

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10.1002/pssr.201409039

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abstract = "We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of \textasciitilde{}300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.",

keywords = "Carrier depletion, Resisitive switching, Resistive random access memories",

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AB - We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ~300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.

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KW - Resisitive switching

KW - Resistive random access memories

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ER -

Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

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Improved high-temperature switching characteristics of Y₂O₃/TiO_x resistive memory through carrier depletion effect