High-performance FETs prepared from electrospun aligned P4TDPP nanofibers

The morphology and charge transport characteristics of electrospun aligned nanofibers based on the 2D conjugated polythiophene derivative P4TDPP are studied. The crystallinity, orientation, and molecular packing of P4TDPP nanofibers are significantly enhanced by a crystalline-induced technique. P4TDPP nanofiber transistors exhibit a high hole mobility of 0.305 cm² V^-1 s^-1 and on/off ratio of 1.30 ×10⁵, which is significantly higher than that of the corresponding spin-coated film (2.10 ×10^-2 cm² V^-1 s^-1). The experimental results suggest that high-performance FETs can be obtained from electrospun aligned nanofibers of crystalline conjugated polymers. High-performance FETs are fabricated by electrospinning. Polarized UV-Vis spectra, synchrotron GIXD, and in-plane XRD indicate ordered stacking and highly oriented lamellar structures within the P4TDPP nanofibers. Transistors based on P4TDPP nanofibers display a hole mobility of 0.305 cm² V ^-1 s^-1 and an on/off ratio of 1.30 × 10⁵, which is much higher than that of the corresponding spin-coated film.