Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As

Chih Cheng Lu; Chong Long Ho; Meng Chyi Wu; Tian Tsrong Shi; Wen Jeng Ho

doi:10.1109/94.971459

Electrical characterization of SiO_x and SiN_x prepared by PECVD technique on In_0.53Ga_0.47As

Chih Cheng Lu
, Chong Long Ho
, Meng Chyi Wu
, Tian Tsrong Shi
, Wen Jeng Ho

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研究成果: 期刊貢獻 › 文章 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We have analyzed the electrical properties of both SiO_x on InGaAs and SiN_x on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ∼400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing.

原文	English
頁（從 - 到）	1011-1015
頁數	5
期刊	IEEE Transactions on Dielectrics and Electrical Insulation
卷	8
發行號	6
DOIs	https://doi.org/10.1109/94.971459
出版狀態	Published - 12月 2001

文獻附註

Funding Information:
The financial support from National Science Council of Taiwan (NSC 88-2215-E-007-004) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. is deeply appreciated.

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title = "Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As",

abstract = "We have analyzed the electrical properties of both SiOx on InGaAs and SiNx on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ∼400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing.",

author = "Lu, \{Chih Cheng\} and Ho, \{Chong Long\} and Wu, \{Meng Chyi\} and Shi, \{Tian Tsrong\} and Ho, \{Wen Jeng\}",

note = "Funding Information: The financial support from National Science Council of Taiwan (NSC 88-2215-E-007-004) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. is deeply appreciated.",

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AU - Lu, Chih Cheng

AU - Ho, Chong Long

AU - Wu, Meng Chyi

AU - Shi, Tian Tsrong

AU - Ho, Wen Jeng

N1 - Funding Information: The financial support from National Science Council of Taiwan (NSC 88-2215-E-007-004) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. is deeply appreciated.

PY - 2001/12

Y1 - 2001/12

N2 - We have analyzed the electrical properties of both SiOx on InGaAs and SiNx on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ∼400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing.

AB - We have analyzed the electrical properties of both SiOx on InGaAs and SiNx on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ∼400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing.

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Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As

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Electrical characterization of SiO_x and SiN_x prepared by PECVD technique on In_0.53Ga_0.47As