Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

Jian Cheng Lin; Wen Jeng Ho; Wen Bin Bai; Jheng Jie Liu; Hung Pin Shiao

doi:10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

Jian Cheng Lin
, Wen Jeng Ho
, Wen Bin Bai
, Jheng Jie Liu
, Hung Pin Shiao

光電工程系

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO₂ ARC.

原文	English
主出版物標題	Proceedings of the 2017 IEEE International Conference on Applied System Innovation
主出版物子標題	Applied System Innovation for Modern Technology, ICASI 2017
編輯	Teen-Hang Meen, Artde Donald Kin-Tak Lam, Stephen D. Prior
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1805-1807
頁數	3
ISBN（電子）	9781509048977
DOIs	https://doi.org/10.1109/ICASI.2017.7988294
出版狀態	Published - 21 7月 2017
事件	2017 IEEE International Conference on Applied System Innovation, ICASI 2017 - Sapporo, Japan 持續時間: 13 5月 2017 → 17 5月 2017

出版系列

名字	Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017

Conference

Conference	2017 IEEE International Conference on Applied System Innovation, ICASI 2017
國家/地區	Japan
城市	Sapporo
期間	13/05/17 → 17/05/17

文獻附註

Publisher Copyright:
© 2017 IEEE.

存取文件

10.1109/ICASI.2017.7988294

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, J. C., Ho, W. J., Bai, W. B., Liu, J. J., & Shiao, H. P. (2017). Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. 於 T.-H. Meen, A. D. K.-T. Lam, & S. D. Prior (編輯), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017 (頁 1805-1807). 文章 7988294 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICASI.2017.7988294

Lin, Jian Cheng ; Ho, Wen Jeng ; Bai, Wen Bin 等. / Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. 編輯 / Teen-Hang Meen ; Artde Donald Kin-Tak Lam ; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 1805-1807 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

@inproceedings{7e88468711284baaadcb1b7e8b1a34fb,

title = "Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell",

abstract = "The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52\% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92\% for the GaAs cell with SiO2 ARC.",

keywords = "Antireflection-coating (ARC), GaAs solar cell, High efficiency, Indium-Tin-oxide (ITO), Passivation",

author = "Lin, \{Jian Cheng\} and Ho, \{Wen Jeng\} and Bai, \{Wen Bin\} and Liu, \{Jheng Jie\} and Shiao, \{Hung Pin\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Conference on Applied System Innovation, ICASI 2017 ; Conference date: 13-05-2017 Through 17-05-2017",

year = "2017",

month = jul,

day = "21",

doi = "10.1109/ICASI.2017.7988294",

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series = "Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1805--1807",

editor = "Teen-Hang Meen and Lam, \{Artde Donald Kin-Tak\} and Prior, \{Stephen D.\}",

booktitle = "Proceedings of the 2017 IEEE International Conference on Applied System Innovation",

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Lin, JC, Ho, WJ, Bai, WB, Liu, JJ & Shiao, HP 2017, Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. 於 T-H Meen, ADK-T Lam & SD Prior (編輯), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017., 7988294, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017, Institute of Electrical and Electronics Engineers Inc., 頁 1805-1807, 2017 IEEE International Conference on Applied System Innovation, ICASI 2017, Sapporo, Japan, 13/05/17. https://doi.org/10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. / Lin, Jian Cheng; Ho, Wen Jeng; Bai, Wen Bin 等.
Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. 編輯 / Teen-Hang Meen; Artde Donald Kin-Tak Lam; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1805-1807 7988294 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

TY - GEN

T1 - Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

AU - Lin, Jian Cheng

AU - Ho, Wen Jeng

AU - Bai, Wen Bin

AU - Liu, Jheng Jie

AU - Shiao, Hung Pin

PY - 2017/7/21

Y1 - 2017/7/21

N2 - The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO2 ARC.

AB - The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO2 ARC.

KW - Antireflection-coating (ARC)

KW - GaAs solar cell

KW - High efficiency

KW - Indium-Tin-oxide (ITO)

KW - Passivation

UR - https://www.scopus.com/pages/publications/85028576230

U2 - 10.1109/ICASI.2017.7988294

DO - 10.1109/ICASI.2017.7988294

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AN - SCOPUS:85028576230

T3 - Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017

SP - 1805

EP - 1807

BT - Proceedings of the 2017 IEEE International Conference on Applied System Innovation

A2 - Meen, Teen-Hang

A2 - Lam, Artde Donald Kin-Tak

A2 - Prior, Stephen D.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE International Conference on Applied System Innovation, ICASI 2017

Y2 - 13 May 2017 through 17 May 2017

ER -

Lin JC, Ho WJ, Bai WB, Liu JJ, Shiao HP. Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. 於 Meen TH, Lam ADKT, Prior SD, 編輯, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1805-1807. 7988294. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). doi: 10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

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