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Effects of the temperature of hot isostatic pressing treatment on Cr-Si targets

  • Chung Hung Tam
  • , Shih Chin Lee
  • , Shih Hsien Chang
  • , Tzu Piao Tang
  • , Hsin Hung Ho
  • , Hui Yun Bor

研究成果: 期刊貢獻文章同行評審

21 引文 斯高帕斯(Scopus)

摘要

Commercial as-hp (hot pressing) treated Cr-Si targets are used throughout this study, with three different compositions: Cr20-Si80, Cr35-Si65 and Cr50-Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr-Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity inspections were performed. The experimental results showed that the 1373 K, 1750 MPa, 4 h HIP treated with three different Cr-Si targets had suppressed porosities successfully. The most efficient was Cr50-Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr-Si targets such as Cr20-Si80 and Cr35-Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr-Si targets.

原文English
頁(從 - 到)565-570
頁數6
期刊Ceramics International
35
發行號2
DOIs
出版狀態Published - 3月 2009

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