Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics

Sea Fue Wang; Shea Jue Wang; Yuh Ruey Wang; Yung Fu Hsu; Liang Yo Chen; Jung Shiung Tsai

doi:10.1016/j.ceramint.2008.10.012

Effect of SiO₂ addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe₃O₈ ceramics

Sea Fue Wang
, Shea Jue Wang
, Yuh Ruey Wang
, Yung Fu Hsu
, Liang Yo Chen
, Jung Shiung Tsai

研究成果: 期刊貢獻 › 文章 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this study, calcined TiTe₃O₈ powder mixed with different amounts of SiO₂ was sintered at various temperatures. The effect of SiO₂ addition on the densification, microstructural evolution and dielectric properties of TiTe₃O₈ was investigated. Results indicate that SiO₂ addition inhibited the grain growth of TiTe₃O₈ and reduced the evaporation of TeO₂. TiTe₃O₈ ceramics with 1 wt% SiO₂ addition and sintered at 750 °C possesses the best dielectric properties: ε_r value of 47.6, Q × f value of 48,800, and τ_f value of +152 ppm/°C. Excess SiO₂ addition results in the poor densification and the existence of secondary phase (SiO₂) dissolved in a small amount of TeO₂. They degrade the dielectric properties and trade off the benefit from the SiO₂ addition.

原文	English
頁（從 - 到）	1813-1817
頁數	5
期刊	Ceramics International
卷	35
發行號	5
DOIs	https://doi.org/10.1016/j.ceramint.2008.10.012
出版狀態	Published - 7月 2009

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10.1016/j.ceramint.2008.10.012

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title = "Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics",

abstract = "In this study, calcined TiTe3O8 powder mixed with different amounts of SiO2 was sintered at various temperatures. The effect of SiO2 addition on the densification, microstructural evolution and dielectric properties of TiTe3O8 was investigated. Results indicate that SiO2 addition inhibited the grain growth of TiTe3O8 and reduced the evaporation of TeO2. TiTe3O8 ceramics with 1 wt\% SiO2 addition and sintered at 750 °C possesses the best dielectric properties: εr value of 47.6, Q × f value of 48,800, and τf value of +152 ppm/°C. Excess SiO2 addition results in the poor densification and the existence of secondary phase (SiO2) dissolved in a small amount of TeO2. They degrade the dielectric properties and trade off the benefit from the SiO2 addition.",

keywords = "Densification, Microstructural evolution, Microwave properties, TiTeO",

author = "Wang, \{Sea Fue\} and Wang, \{Shea Jue\} and Wang, \{Yuh Ruey\} and Hsu, \{Yung Fu\} and Chen, \{Liang Yo\} and Tsai, \{Jung Shiung\}",

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T1 - Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics

AU - Wang, Sea Fue

AU - Wang, Shea Jue

AU - Wang, Yuh Ruey

AU - Hsu, Yung Fu

AU - Chen, Liang Yo

AU - Tsai, Jung Shiung

PY - 2009/7

Y1 - 2009/7

N2 - In this study, calcined TiTe3O8 powder mixed with different amounts of SiO2 was sintered at various temperatures. The effect of SiO2 addition on the densification, microstructural evolution and dielectric properties of TiTe3O8 was investigated. Results indicate that SiO2 addition inhibited the grain growth of TiTe3O8 and reduced the evaporation of TeO2. TiTe3O8 ceramics with 1 wt% SiO2 addition and sintered at 750 °C possesses the best dielectric properties: εr value of 47.6, Q × f value of 48,800, and τf value of +152 ppm/°C. Excess SiO2 addition results in the poor densification and the existence of secondary phase (SiO2) dissolved in a small amount of TeO2. They degrade the dielectric properties and trade off the benefit from the SiO2 addition.

AB - In this study, calcined TiTe3O8 powder mixed with different amounts of SiO2 was sintered at various temperatures. The effect of SiO2 addition on the densification, microstructural evolution and dielectric properties of TiTe3O8 was investigated. Results indicate that SiO2 addition inhibited the grain growth of TiTe3O8 and reduced the evaporation of TeO2. TiTe3O8 ceramics with 1 wt% SiO2 addition and sintered at 750 °C possesses the best dielectric properties: εr value of 47.6, Q × f value of 48,800, and τf value of +152 ppm/°C. Excess SiO2 addition results in the poor densification and the existence of secondary phase (SiO2) dissolved in a small amount of TeO2. They degrade the dielectric properties and trade off the benefit from the SiO2 addition.

KW - Densification

KW - Microstructural evolution

KW - Microwave properties

KW - TiTeO

UR - https://www.scopus.com/pages/publications/67349220184

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AN - SCOPUS:67349220184

SN - 0272-8842

VL - 35

SP - 1813

EP - 1817

JO - Ceramics International

JF - Ceramics International

IS - 5

ER -

Effect of SiO2 addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe3O8 ceramics

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Effect of SiO₂ addition on the microstructure and microwave dielectric properties of ultra-low fire TiTe₃O₈ ceramics