Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing

Wen Jeng Ho; Min Chun Huang; Yi Yu Lee; Zhong Fu Hou; Jian Jyun Liao

doi:10.1109/INEC.2014.7460324

Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing

Wen Jeng Ho
, Min Chun Huang
, Yi Yu Lee
, Zhong Fu Hou
, Jian Jyun Liao

光電工程系

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO₂ and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.

原文	English
主出版物標題	2014 IEEE International Nanoelectronics Conference, INEC 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460324
出版狀態	Published - 26 4月 2016
事件	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan 持續時間: 28 7月 2014 → 31 7月 2014

出版系列

名字	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
國家/地區	Japan
城市	Sapporo
期間	28/07/14 → 31/07/14

文獻附註

Publisher Copyright:
© 2014 IEEE.

UN SDG

此研究成果有助於以下永續發展目標

Affordable and clean energy

存取文件

10.1109/INEC.2014.7460324

其它文件與鏈接

Link to publication in Scopus

引用此

Ho, W. J., Huang, M. C., Lee, Y. Y., Hou, Z. F., & Liao, J. J. (2016). Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014 文章 7460324 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460324

@inproceedings{6f7de940f5b7402887e689b3997f87d3,

title = "Demonstration of high efficiency 19.68\% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing",

abstract = "The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80\%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06\% to 19.68\% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.",

keywords = "ITO electrode, MOS-structure solar cell, conversion efficiency, photovoltaic, voltage biasing",

author = "Ho, \{Wen Jeng\} and Huang, \{Min Chun\} and Lee, \{Yi Yu\} and Hou, \{Zhong Fu\} and Liao, \{Jian Jyun\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460324",

language = "???core.languages.en\_GB???",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

}

Ho, WJ, Huang, MC, Lee, YY, Hou, ZF & Liao, JJ 2016, Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460324, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 28/07/14. https://doi.org/10.1109/INEC.2014.7460324

Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. / Ho, Wen Jeng; Huang, Min Chun; Lee, Yi Yu 等.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460324 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

研究成果: 書籍/報告/會議論文中的章節 › 會議投稿 › 同行評審

TY - GEN

T1 - Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing

AU - Ho, Wen Jeng

AU - Huang, Min Chun

AU - Lee, Yi Yu

AU - Hou, Zhong Fu

AU - Liao, Jian Jyun

PY - 2016/4/26

Y1 - 2016/4/26

N2 - The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.

AB - The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.

KW - ITO electrode

KW - MOS-structure solar cell

KW - conversion efficiency

KW - photovoltaic

KW - voltage biasing

UR - https://www.scopus.com/pages/publications/84971281246

U2 - 10.1109/INEC.2014.7460324

DO - 10.1109/INEC.2014.7460324

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84971281246

T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Nanoelectronics Conference, INEC 2014

Y2 - 28 July 2014 through 31 July 2014

ER -

Ho WJ, Huang MC, Lee YY, Hou ZF, Liao JJ. Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460324. (2014 IEEE International Nanoelectronics Conference, INEC 2014). doi: 10.1109/INEC.2014.7460324