研究成果: 專利
}
TY - PAT
T1 - Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same
AU - 蔡, 子萱
PY - 2006/2/1
Y1 - 2006/2/1
M3 - 專利
M1 - Application No. 20060035400
ER -