An investigation of chemical species and electrical property of nitrogen-doped nanocrystalline diamond films grown by microwave plasma jet chemical vapor deposition

This study investigated chemical species in the plasma while synthesizing nitrogen-doped nanocrystalline diamond (NCD) films using microwave plasma jet chemical vapor deposition (MPJCVD) system. The investigation is done by using in-situ plasma optical emission spectroscopy (OES). The electrical resistivity of the nitrogen-doped NCD films increases by 6 orders of magnitude (up to 6.7 × 10^-4Ω cm) with increasing nitrogen content. This approach also helps us in further understanding of the plasma species during depositing NCD films and also the electronic structure of grown conductive diamond phase through analysis of as-doped nitrogen contents.