A new current-mode fast-transient-response shunt regulator using CMOS technology

Jiann Jong Chen; Che Min Kung; Yuh Shyan Hwang

doi:10.1007/s10470-010-9522-4

A new current-mode fast-transient-response shunt regulator using CMOS technology

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2 引文斯高帕斯（Scopus）

摘要

The demand for current-mode fast-transient-response shunt regulator is increasing for the growth of portable electronics, such as cellular phones, PDA, laptops, etc. A new current-mode fast-transient-response shunt regulator is presented in this paper. The proposed shunt regulator used a single Miller compensation capacitor to increase stability. The current-mode shunt regulator helps the transient response to be faster than the voltage-mode low-dropout regulator (LDO) and the power noise (bounce noise) is smaller than one. The proposed current-mode shunt regulator has been fabricated with TSMC 0.35 μm 2P4M CMOS technology. The experimental results show the transient-response time is only 400 ns within 0.5% error and the maximum output voltage dip is only 70 mV for full loading current variation. Moreover, the line and load regulations are 26 μV/mA and 8 ppm/mA, respectively. The dropout current is 1.0741 mA for loading current 150 mA. The active chip area is 226 μm × 310 μm.

原文	English
頁（從 - 到）	189-195
頁數	7
期刊	Analog Integrated Circuits and Signal Processing
卷	66
發行號	2
DOIs	https://doi.org/10.1007/s10470-010-9522-4
出版狀態	Published - 2月 2011

文獻附註

Funding Information:
Acknowledgments The authors would like to thank National Science Council for project supporting and Chip Implementation Center for chip fabrication. This work was sponsored by NSC94-2213-E-027-052.

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10.1007/s10470-010-9522-4

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abstract = "The demand for current-mode fast-transient-response shunt regulator is increasing for the growth of portable electronics, such as cellular phones, PDA, laptops, etc. A new current-mode fast-transient-response shunt regulator is presented in this paper. The proposed shunt regulator used a single Miller compensation capacitor to increase stability. The current-mode shunt regulator helps the transient response to be faster than the voltage-mode low-dropout regulator (LDO) and the power noise (bounce noise) is smaller than one. The proposed current-mode shunt regulator has been fabricated with TSMC 0.35 μm 2P4M CMOS technology. The experimental results show the transient-response time is only 400 ns within 0.5\% error and the maximum output voltage dip is only 70 mV for full loading current variation. Moreover, the line and load regulations are 26 μV/mA and 8 ppm/mA, respectively. The dropout current is 1.0741 mA for loading current 150 mA. The active chip area is 226 μm × 310 μm.",

keywords = "Current-mode shunt regulator, Miller compensation, Transient response",

author = "Chen, \{Jiann Jong\} and Kung, \{Che Min\} and Hwang, \{Yuh Shyan\}",

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AB - The demand for current-mode fast-transient-response shunt regulator is increasing for the growth of portable electronics, such as cellular phones, PDA, laptops, etc. A new current-mode fast-transient-response shunt regulator is presented in this paper. The proposed shunt regulator used a single Miller compensation capacitor to increase stability. The current-mode shunt regulator helps the transient response to be faster than the voltage-mode low-dropout regulator (LDO) and the power noise (bounce noise) is smaller than one. The proposed current-mode shunt regulator has been fabricated with TSMC 0.35 μm 2P4M CMOS technology. The experimental results show the transient-response time is only 400 ns within 0.5% error and the maximum output voltage dip is only 70 mV for full loading current variation. Moreover, the line and load regulations are 26 μV/mA and 8 ppm/mA, respectively. The dropout current is 1.0741 mA for loading current 150 mA. The active chip area is 226 μm × 310 μm.

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A new current-mode fast-transient-response shunt regulator using CMOS technology

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