TY - GEN
T1 - A 3.1-10.6 GHz frequency tunable ultra wideband LNA
AU - Sung, Guo Ming
AU - Hsu, Chia Yu
AU - Shen, Chiu Lung
PY - 2011
Y1 - 2011
N2 - This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) which is implemented with TSMC 0.18-μm CMOS process. In the proposed chip, both shunt-series feedback and bandpass filter are used to complete the input matching of the desired ultra broadband chip; and that the power consumption is reduced using the current reused method. Besides, not only the isolation of LNA is improved with a cascade amplifier, but also the output matching is achieved with buffer. Finally, a multiple gated circuit is added to improve the linearity. The simulation results of the proposed UWB LNA shows that the isolation, input return loss, output return loss, power consumption are -83 dB, -12.3 dB, -11.1 dB, and 12.2 mW, respectively; and that the power gain from 11.5 dB to 13.4 dB, gain flatness of 0.245, and noise figure from 3.8 dB to 4.7 dB are obtained at frequency bandwidth from 3.1 GHz to 10.6 GHz. Notify that the simulated P 1dB and IIP 3 are -11.25 dBm and -13.28 dBm, respectively, at frequency of 6 GHz.
AB - This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) which is implemented with TSMC 0.18-μm CMOS process. In the proposed chip, both shunt-series feedback and bandpass filter are used to complete the input matching of the desired ultra broadband chip; and that the power consumption is reduced using the current reused method. Besides, not only the isolation of LNA is improved with a cascade amplifier, but also the output matching is achieved with buffer. Finally, a multiple gated circuit is added to improve the linearity. The simulation results of the proposed UWB LNA shows that the isolation, input return loss, output return loss, power consumption are -83 dB, -12.3 dB, -11.1 dB, and 12.2 mW, respectively; and that the power gain from 11.5 dB to 13.4 dB, gain flatness of 0.245, and noise figure from 3.8 dB to 4.7 dB are obtained at frequency bandwidth from 3.1 GHz to 10.6 GHz. Notify that the simulated P 1dB and IIP 3 are -11.25 dBm and -13.28 dBm, respectively, at frequency of 6 GHz.
KW - Ultra wideband system
KW - current reused
KW - low noise amplifier
KW - multiple gated circuits
UR - https://www.scopus.com/pages/publications/84855907167
U2 - 10.1109/ASQED.2011.6111699
DO - 10.1109/ASQED.2011.6111699
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AN - SCOPUS:84855907167
SN - 9781457701443
T3 - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
SP - 37
EP - 41
BT - Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
T2 - 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
Y2 - 19 July 2011 through 20 July 2011
ER -