Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications

Yo Sheng Lin; Hsiao Bin Liang; Hung Wei Chiu; Kevin Liu; Hsin Hong Wu; Shey Shi Lu; Mou Shiung Lin

doi:10.1109/EDSSC.2005.1635202

Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications

Yo Sheng Lin
, Hsiao Bin Liang
, Hung Wei Chiu
, Kevin Liu
, Hsin Hong Wu
, Shey Shi Lu
, Mou Shiung Lin

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we analyze the effects of temperature (from -50°C to 200°C), substrate impedance, and substrate thickness on the noise figure (NF) and quality factor (Q-factor) performances of monolithic RF inductors on silicon. A 0.45 dB (from 0.6 dB to 0.15 dB) reduction in minimum NF (NF _min) at 10 GHz, a 308% (from 11.6 to 47.3) increase in Q-factor at 10 GHz, and a 4% (from 20 GHz to 20.8 GHz) improvement in self-resonant frequency (f_SR) were obtained if post-process of proton implantation had been done. In addition, a 0.36 dB reduction (from 0.6 dB to 0.24 dB) in NF _min at 10 GHz, a 176% (from 11.6 to 32) increase in Q-factor at 10 GHz, and a 30% (from 20 GHz to 26 GHz) improvement in f_SR were achieved if the silicon substrate was thinned down from 750 μm to 20 μm. This means both the proton implantation and the silicon substrate thinning are effective in improving the NF and Q-factor performances of monolithic RF inductors on silicon. The present analyses are helpful for RF designers to design high- performance fully on-chip LNAs and VCOs for single- chip receiver front-end or 3.1-10.6 GHz ultra-wide-band (UWB) system applications.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	47-50
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635202
State	Published - 2005
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	19/12/05 → 21/12/05

Keywords

Inductor
Temperature
Wideband modeling

Access to Document

10.1109/EDSSC.2005.1635202

Cite this

Lin, Y. S., Liang, H. B., Chiu, H. W., Liu, K., Wu, H. H., Lu, S. S., & Lin, M. S. (2005). Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 47-50). Article 1635202 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635202

Lin, Yo Sheng ; Liang, Hsiao Bin ; Chiu, Hung Wei et al. / Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 47-50 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

@inproceedings{46a8526b43624a00b8de93690ae32f86,

title = "Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications",

abstract = "In this paper, we analyze the effects of temperature (from -50°C to 200°C), substrate impedance, and substrate thickness on the noise figure (NF) and quality factor (Q-factor) performances of monolithic RF inductors on silicon. A 0.45 dB (from 0.6 dB to 0.15 dB) reduction in minimum NF (NF min) at 10 GHz, a 308\% (from 11.6 to 47.3) increase in Q-factor at 10 GHz, and a 4\% (from 20 GHz to 20.8 GHz) improvement in self-resonant frequency (fSR) were obtained if post-process of proton implantation had been done. In addition, a 0.36 dB reduction (from 0.6 dB to 0.24 dB) in NF min at 10 GHz, a 176\% (from 11.6 to 32) increase in Q-factor at 10 GHz, and a 30\% (from 20 GHz to 26 GHz) improvement in fSR were achieved if the silicon substrate was thinned down from 750 μm to 20 μm. This means both the proton implantation and the silicon substrate thinning are effective in improving the NF and Q-factor performances of monolithic RF inductors on silicon. The present analyses are helpful for RF designers to design high- performance fully on-chip LNAs and VCOs for single- chip receiver front-end or 3.1-10.6 GHz ultra-wide-band (UWB) system applications.",

keywords = "Inductor, Temperature, Wideband modeling",

author = "Lin, \{Yo Sheng\} and Liang, \{Hsiao Bin\} and Chiu, \{Hung Wei\} and Kevin Liu and Wu, \{Hsin Hong\} and Lu, \{Shey Shi\} and Lin, \{Mou Shiung\}",

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doi = "10.1109/EDSSC.2005.1635202",

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isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "47--50",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Lin, YS, Liang, HB, Chiu, HW, Liu, K, Wu, HH, Lu, SS & Lin, MS 2005, Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635202, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 47-50, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635202

Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications. / Lin, Yo Sheng; Liang, Hsiao Bin; Chiu, Hung Wei et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 47-50 1635202 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications

AU - Lin, Yo Sheng

AU - Liang, Hsiao Bin

AU - Chiu, Hung Wei

AU - Liu, Kevin

AU - Wu, Hsin Hong

AU - Lu, Shey Shi

AU - Lin, Mou Shiung

PY - 2005

Y1 - 2005

N2 - In this paper, we analyze the effects of temperature (from -50°C to 200°C), substrate impedance, and substrate thickness on the noise figure (NF) and quality factor (Q-factor) performances of monolithic RF inductors on silicon. A 0.45 dB (from 0.6 dB to 0.15 dB) reduction in minimum NF (NF min) at 10 GHz, a 308% (from 11.6 to 47.3) increase in Q-factor at 10 GHz, and a 4% (from 20 GHz to 20.8 GHz) improvement in self-resonant frequency (fSR) were obtained if post-process of proton implantation had been done. In addition, a 0.36 dB reduction (from 0.6 dB to 0.24 dB) in NF min at 10 GHz, a 176% (from 11.6 to 32) increase in Q-factor at 10 GHz, and a 30% (from 20 GHz to 26 GHz) improvement in fSR were achieved if the silicon substrate was thinned down from 750 μm to 20 μm. This means both the proton implantation and the silicon substrate thinning are effective in improving the NF and Q-factor performances of monolithic RF inductors on silicon. The present analyses are helpful for RF designers to design high- performance fully on-chip LNAs and VCOs for single- chip receiver front-end or 3.1-10.6 GHz ultra-wide-band (UWB) system applications.

AB - In this paper, we analyze the effects of temperature (from -50°C to 200°C), substrate impedance, and substrate thickness on the noise figure (NF) and quality factor (Q-factor) performances of monolithic RF inductors on silicon. A 0.45 dB (from 0.6 dB to 0.15 dB) reduction in minimum NF (NF min) at 10 GHz, a 308% (from 11.6 to 47.3) increase in Q-factor at 10 GHz, and a 4% (from 20 GHz to 20.8 GHz) improvement in self-resonant frequency (fSR) were obtained if post-process of proton implantation had been done. In addition, a 0.36 dB reduction (from 0.6 dB to 0.24 dB) in NF min at 10 GHz, a 176% (from 11.6 to 32) increase in Q-factor at 10 GHz, and a 30% (from 20 GHz to 26 GHz) improvement in fSR were achieved if the silicon substrate was thinned down from 750 μm to 20 μm. This means both the proton implantation and the silicon substrate thinning are effective in improving the NF and Q-factor performances of monolithic RF inductors on silicon. The present analyses are helpful for RF designers to design high- performance fully on-chip LNAs and VCOs for single- chip receiver front-end or 3.1-10.6 GHz ultra-wide-band (UWB) system applications.

KW - Inductor

KW - Temperature

KW - Wideband modeling

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BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

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Lin YS, Liang HB, Chiu HW, Liu K, Wu HH, Lu SS et al. Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 47-50. 1635202. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635202

Wideband modeling of temperature and substrate effects in RF inductors on silicon for 3.1-10.6 GHz UWB system applications

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