The preparation and characterization of Ga-doped CuInS2 films with chemical bath deposition

Guan Ting Pan; M. H. Lai; Rei Cheng Juang; T. W. Chung; Thomas C.K. Yang

doi:10.1016/j.solmat.2010.05.047

The preparation and characterization of Ga-doped CuInS₂ films with chemical bath deposition

Guan Ting Pan
, M. H. Lai
, Rei Cheng Juang
, T. W. Chung
, Thomas C.K. Yang

Department of Chemical Engineering and Biotechnology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Ga-doped CuInS₂ films were prepared on indiumtinoxide substrates by chemical-bath-deposition method. The XRD diffractograms demonstrate that CuInS₂ is the major crystalline phase of the as-prepared films. In addition, the doping density and flat band potential of the Ga-doped CuInS ₂ electrodes were measured with impedance spectroscopy based on the MottSchottky equation. With Ga molar ratios in the bath solution higher than 0.2, the semiconductor property of the sample was changed from n- to p-type. Additionally, the values of energy band gap and carrier densities of the Ga-doped samples were found in the range of 1.501.51 eV and 2.07×10 ¹⁵4.50×10¹⁵ cm^-3, respectively. Furthermore, the maximum photocurrent density of the as-prepared film was -1.28 mA/cm² (with an external potential set at -1.0 V) when subject to the illumination of a 300 Xe lamp. These visible-light responsive properties assure their promising applications in photo-absorbing layers for photovoltaic cells or photocatalysts for hydrogen production.

Original language	English
Pages (from-to)	1790-1796
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	94
Issue number	10
DOIs	https://doi.org/10.1016/j.solmat.2010.05.047
State	Published - Oct 2010

Bibliographical note

Funding Information:
The partial financial support from the National Science Council of ROC (NSC 98-2221-E-027-089 ) is gratefully appreciated. The authors would like to thank Mr. Chung-Hon Chen for his assistance in the sample preparation.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CuInS crystalline
Photo-absorbing layer
Photocatalysts
Photoelectrochemical performance

Access to Document

10.1016/j.solmat.2010.05.047

Cite this

@article{07a54f801fbf4e1cb3ad600c988cc037,

title = "The preparation and characterization of Ga-doped CuInS2 films with chemical bath deposition",

abstract = "Ga-doped CuInS2 films were prepared on indiumtinoxide substrates by chemical-bath-deposition method. The XRD diffractograms demonstrate that CuInS2 is the major crystalline phase of the as-prepared films. In addition, the doping density and flat band potential of the Ga-doped CuInS 2 electrodes were measured with impedance spectroscopy based on the MottSchottky equation. With Ga molar ratios in the bath solution higher than 0.2, the semiconductor property of the sample was changed from n- to p-type. Additionally, the values of energy band gap and carrier densities of the Ga-doped samples were found in the range of 1.501.51 eV and 2.07×10 154.50×1015 cm-3, respectively. Furthermore, the maximum photocurrent density of the as-prepared film was -1.28 mA/cm2 (with an external potential set at -1.0 V) when subject to the illumination of a 300 Xe lamp. These visible-light responsive properties assure their promising applications in photo-absorbing layers for photovoltaic cells or photocatalysts for hydrogen production.",

keywords = "CuInS crystalline, Photo-absorbing layer, Photocatalysts, Photoelectrochemical performance",

author = "Pan, \{Guan Ting\} and Lai, \{M. H.\} and Juang, \{Rei Cheng\} and Chung, \{T. W.\} and Yang, \{Thomas C.K.\}",

note = "Funding Information: The partial financial support from the National Science Council of ROC (NSC 98-2221-E-027-089 ) is gratefully appreciated. The authors would like to thank Mr. Chung-Hon Chen for his assistance in the sample preparation. ",

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T1 - The preparation and characterization of Ga-doped CuInS2 films with chemical bath deposition

AU - Pan, Guan Ting

AU - Lai, M. H.

AU - Juang, Rei Cheng

AU - Chung, T. W.

AU - Yang, Thomas C.K.

N1 - Funding Information: The partial financial support from the National Science Council of ROC (NSC 98-2221-E-027-089 ) is gratefully appreciated. The authors would like to thank Mr. Chung-Hon Chen for his assistance in the sample preparation.

PY - 2010/10

Y1 - 2010/10

N2 - Ga-doped CuInS2 films were prepared on indiumtinoxide substrates by chemical-bath-deposition method. The XRD diffractograms demonstrate that CuInS2 is the major crystalline phase of the as-prepared films. In addition, the doping density and flat band potential of the Ga-doped CuInS 2 electrodes were measured with impedance spectroscopy based on the MottSchottky equation. With Ga molar ratios in the bath solution higher than 0.2, the semiconductor property of the sample was changed from n- to p-type. Additionally, the values of energy band gap and carrier densities of the Ga-doped samples were found in the range of 1.501.51 eV and 2.07×10 154.50×1015 cm-3, respectively. Furthermore, the maximum photocurrent density of the as-prepared film was -1.28 mA/cm2 (with an external potential set at -1.0 V) when subject to the illumination of a 300 Xe lamp. These visible-light responsive properties assure their promising applications in photo-absorbing layers for photovoltaic cells or photocatalysts for hydrogen production.

AB - Ga-doped CuInS2 films were prepared on indiumtinoxide substrates by chemical-bath-deposition method. The XRD diffractograms demonstrate that CuInS2 is the major crystalline phase of the as-prepared films. In addition, the doping density and flat band potential of the Ga-doped CuInS 2 electrodes were measured with impedance spectroscopy based on the MottSchottky equation. With Ga molar ratios in the bath solution higher than 0.2, the semiconductor property of the sample was changed from n- to p-type. Additionally, the values of energy band gap and carrier densities of the Ga-doped samples were found in the range of 1.501.51 eV and 2.07×10 154.50×1015 cm-3, respectively. Furthermore, the maximum photocurrent density of the as-prepared film was -1.28 mA/cm2 (with an external potential set at -1.0 V) when subject to the illumination of a 300 Xe lamp. These visible-light responsive properties assure their promising applications in photo-absorbing layers for photovoltaic cells or photocatalysts for hydrogen production.

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