Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors

Ching Lin Fan; Yu Zuo Lin; Ping Cheng Chiu; Shea Jue Wang; Win Der Lee

doi:10.1016/j.orgel.2013.05.031

Teflon/SiO₂ bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors

Ching Lin Fan
, Yu Zuo Lin
, Ping Cheng Chiu
, Shea Jue Wang
, Win Der Lee

Department of Materials and Mineral Resources Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We demonstrate a bilayer passivation method using a Teflon and SiO ₂ combination layer to improve the electrical reliability of pentacene-based organic thin-film transistors (OTFTs). The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene channel layer, and can effectively protect the OTFTs from plasma damage during the SiO₂ deposition process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO₂, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60-80% relative humidity.

Original language	English
Pages (from-to)	2228-2232
Number of pages	5
Journal	Organic Electronics
Volume	14
Issue number	9
DOIs	https://doi.org/10.1016/j.orgel.2013.05.031
State	Published - 2013

Bibliographical note

Funding Information:
The authors would like to acknowledge the financial support of the National Science Council (NSC) under Contract No. NSC 101-2221-E-011-070. We thank Win-Der Lee and Shea-Jue Wang for helpful discussions, and Advanced Optoelectronic Device Fabrication Laboratory of NTUST for equipment support.

Keywords

Organic thin-film transistor
Passivation
Pentacene
Reliability
Teflon

Access to Document

10.1016/j.orgel.2013.05.031

Cite this

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title = "Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors",

abstract = "We demonstrate a bilayer passivation method using a Teflon and SiO 2 combination layer to improve the electrical reliability of pentacene-based organic thin-film transistors (OTFTs). The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene channel layer, and can effectively protect the OTFTs from plasma damage during the SiO2 deposition process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO2, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60-80\% relative humidity.",

keywords = "Organic thin-film transistor, Passivation, Pentacene, Reliability, Teflon",

author = "Fan, \{Ching Lin\} and Lin, \{Yu Zuo\} and Chiu, \{Ping Cheng\} and Wang, \{Shea Jue\} and Lee, \{Win Der\}",

note = "Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) under Contract No. NSC 101-2221-E-011-070. We thank Win-Der Lee and Shea-Jue Wang for helpful discussions, and Advanced Optoelectronic Device Fabrication Laboratory of NTUST for equipment support.",

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T1 - Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors

AU - Fan, Ching Lin

AU - Lin, Yu Zuo

AU - Chiu, Ping Cheng

AU - Wang, Shea Jue

AU - Lee, Win Der

N1 - Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) under Contract No. NSC 101-2221-E-011-070. We thank Win-Der Lee and Shea-Jue Wang for helpful discussions, and Advanced Optoelectronic Device Fabrication Laboratory of NTUST for equipment support.

PY - 2013

Y1 - 2013

N2 - We demonstrate a bilayer passivation method using a Teflon and SiO 2 combination layer to improve the electrical reliability of pentacene-based organic thin-film transistors (OTFTs). The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene channel layer, and can effectively protect the OTFTs from plasma damage during the SiO2 deposition process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO2, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60-80% relative humidity.

AB - We demonstrate a bilayer passivation method using a Teflon and SiO 2 combination layer to improve the electrical reliability of pentacene-based organic thin-film transistors (OTFTs). The Teflon was deposited as a buffer layer using a thermal evaporator that exhibited good compatibility with the underlying pentacene channel layer, and can effectively protect the OTFTs from plasma damage during the SiO2 deposition process, resulting in a negligible initial performance drop in OTFTs. Furthermore, because of the excellent moisture barrier ability of SiO2, the OTFTs exhibited good time-dependent electrical performance, even after 168 h of aging in ambient air with 60-80% relative humidity.

KW - Organic thin-film transistor

KW - Passivation

KW - Pentacene

KW - Reliability

KW - Teflon

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JO - Organic Electronics

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