@inproceedings{4c3679f9cbca4bb8b492a64049217f14,
title = "Recovery behavior in amorphous silicon solar module at low temperature",
abstract = "Electrical performance of a light-induced degraded amorphous thin film (a-Si:H) module was investigated at various recovery temperature ranging from 25 to 65°C. Fill factor (FF) was proposed to describe the module performance due to its sensitivity to the resistance characteristics of module and environment parameters. The ground state of the a-Si:H module was 59.1\% in fill factor, while an exponential increase in FF finally leaded to a saturated state around 60.6\% with the increasing module temperature. Obviously, it is suggested that the recovery behavior of a-Si:H module occurs when heating up the module, and the performance itself is influenced by annealing parameters. Yet, a further assessment of the electrical parameters indicated that the increase of the FF was mainly dominated by the decrease of the series resistance (Rs).",
keywords = "Amorphous thin film, Exponential behavior, Fill factor, Series resistance",
author = "Hsieh, \{Hsin Hsin\} and Cheng, \{Jung Sheng\}",
year = "2009",
doi = "10.1109/PVSC.2009.5411636",
language = "???core.languages.en\_GB???",
isbn = "9781424429509",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "486--488",
booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",
note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",
}