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Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering

  • Tao Wei Chou
  • , Chun Hung Lai
  • , Chia Hsuan Lin
  • , T. J. Wang
  • , W. H. Tsai
  • , H. H. Yee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Impurity-free quantum well disordering has been used for the wavelength tuning of strained InGaAsP/InP multiple-quantum-well (MQW) structures. By implementing different kinds of dielectric caps, damage enhanced and thermally induced quantum well intermixings were carried out for the bandgap engineering of the MQW after wafer growth. Two different combinations of the dielectric capping were selected for extended-cavity laser fabrication to evaluate the effects of quantum well disordering.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages228
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume1

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Country/TerritoryTaiwan
CityTaipei
Period15/12/0319/12/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE..

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