Abstract
This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.
| Original language | English |
|---|---|
| Article number | 5373911 |
| Pages (from-to) | 179-181 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 22 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Feb 2010 |
Bibliographical note
Funding Information:Manuscript received July 29, 2009; revised November 09, 2009; accepted November 16, 2009. Current version published January 15, 2010. This work was supported by the National Science Council of the Republic of China, Taiwan, under Contract NSC 97-2221-E-027-114 and Contract NSC 98-2221-E-027-007-MY3.
Keywords
- Index terms-quantum dots (qds)
- Vertical-cavity surface-emitting lasers (vcsels)
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