Abstract
We fabricated high speed InAlAs avalanche photodiode without guard ring. It demonstrated the dark current of 1.9 nA and capacitance of 0.16 pF at 0.9 Vbr, and f3-dB of 10 GHz under different incident optical-powers.
| Original language | English |
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| Title of host publication | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781943580927 |
| State | Published - 2021 |
| Event | 2021 Opto-Electronics and Communications Conference, OECC 2021 - Hong Kong, Hong Kong Duration: 3 Jul 2021 → 7 Jul 2021 |
Publication series
| Name | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
|---|
Conference
| Conference | 2021 Opto-Electronics and Communications Conference, OECC 2021 |
|---|---|
| Country/Territory | Hong Kong |
| City | Hong Kong |
| Period | 3/07/21 → 7/07/21 |
Bibliographical note
Publisher Copyright:© 2021 OSA.
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