Optoelectronic properties of GaN thin-film light-emitting diodes with Ag nanoparticles/multi-layer graphene transparent conductive layer

This work presents a GaN thin-film light-emitting diode (TF-LED) with silver nanoparticles (AgNPs)/multi-layer graphene (MLG) transparent conductive layer (TCL) as a contact. The GaN TF-LED wafer was electroplated on a copper thick layer, which functions as a flexible substrate on the front side of the wafer. GaN TF-LED was then performed on the electroplated flexible copper by using a laser lift-off procedure. Next, the surface of GaN TF-LED was etched by a photoelectrochemical method to remove the residue of gallium oxide. Additionally, an AgNPs/MLG TCL as a cathode electrode was deposited on the of n-GaN layer of TF-LED. Finally, the optoelectronic properties, reliability, and thermal conductivity of the GaN TF-LEDs on the electroplated flexible copper were examined.