Abstract
We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.
| Original language | English |
|---|---|
| Pages (from-to) | 653-656 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 63 |
| Issue number | 6 |
| DOIs | |
| State | Published - Sep 2010 |
Keywords
- Chemical vapor deposition (CVD)
- Composites
- Nanostructure
- Polymer matrix
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