Microstructure and electrical properties of sputtered Ba(Sr)TiO3 films: Dopant and crystal structure effects

C. H. Wu; Jinn P. Chu; S. F. Wang

Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films: Dopant and crystal structure effects

C. H. Wu
, Jinn P. Chu
, S. F. Wang

Department of Materials and Mineral Resources Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ferroelectric oxide thin films with a perovskite structure, such as BaTiO₃ (BT), (Ba,Sr)TiO₃ (BST), have attracted considerable attention, because of their potential applications in memories, thin film capacitors, and electro-optics. Obtaining thin films with properties approaching bulk forms as well as understanding the formation mechanism of films would contribute general insight into thin film physics and accelerate its practical applications in many devices. This presentation will first show the crystallization behavior of BT film using XRD and thermal analyses techniques. MgO has been reported to add to BST to form a ceramic composite in order to dilute the sensitivity of dielectric constant to environmental stress and further suppress the dielectric loss at high frequencies. Further, the dopant (such as Ho₂O₃) has been shown to have beneficial effects on the property improvement of bulk BT. In this presentation, effects of the additives such as Ho₂O₃ and MgO on the crystal structures as well as electrical properties of BT and BST films are discussed.

Original language	English
Title of host publication	IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006
Pages	422-427
Number of pages	6
State	Published - 2006
Event	2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006 - Denver, CO, United States Duration: 24 Apr 2006 → 27 Apr 2006

Publication series

Name	IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006

Conference

Conference	2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006
Country/Territory	United States
City	Denver, CO
Period	24/04/06 → 27/04/06

Keywords

Crystallization behavior
High-resolution transmission electron microscope (HRTEM)
Leakage current
Sputtering

Cite this

Wu, C. H., Chu, J. P., & Wang, S. F. (2006). Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films: Dopant and crystal structure effects. In IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006 (pp. 422-427). (IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006).

Wu, C. H. ; Chu, Jinn P. ; Wang, S. F. / Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films : Dopant and crystal structure effects. IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006. 2006. pp. 422-427 (IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006).

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title = "Microstructure and electrical properties of sputtered Ba(Sr)TiO3 films: Dopant and crystal structure effects",

abstract = "Ferroelectric oxide thin films with a perovskite structure, such as BaTiO3 (BT), (Ba,Sr)TiO3 (BST), have attracted considerable attention, because of their potential applications in memories, thin film capacitors, and electro-optics. Obtaining thin films with properties approaching bulk forms as well as understanding the formation mechanism of films would contribute general insight into thin film physics and accelerate its practical applications in many devices. This presentation will first show the crystallization behavior of BT film using XRD and thermal analyses techniques. MgO has been reported to add to BST to form a ceramic composite in order to dilute the sensitivity of dielectric constant to environmental stress and further suppress the dielectric loss at high frequencies. Further, the dopant (such as Ho2O3) has been shown to have beneficial effects on the property improvement of bulk BT. In this presentation, effects of the additives such as Ho2O3 and MgO on the crystal structures as well as electrical properties of BT and BST films are discussed.",

keywords = "Crystallization behavior, High-resolution transmission electron microscope (HRTEM), Leakage current, Sputtering",

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Wu, CH, Chu, JP & Wang, SF 2006, Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films: Dopant and crystal structure effects. in IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006. IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006, pp. 422-427, 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006, Denver, CO, United States, 24/04/06.

Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films: Dopant and crystal structure effects. / Wu, C. H.; Chu, Jinn P.; Wang, S. F.
IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006. 2006. p. 422-427 (IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wu, C. H.

AU - Chu, Jinn P.

AU - Wang, S. F.

PY - 2006

Y1 - 2006

N2 - Ferroelectric oxide thin films with a perovskite structure, such as BaTiO3 (BT), (Ba,Sr)TiO3 (BST), have attracted considerable attention, because of their potential applications in memories, thin film capacitors, and electro-optics. Obtaining thin films with properties approaching bulk forms as well as understanding the formation mechanism of films would contribute general insight into thin film physics and accelerate its practical applications in many devices. This presentation will first show the crystallization behavior of BT film using XRD and thermal analyses techniques. MgO has been reported to add to BST to form a ceramic composite in order to dilute the sensitivity of dielectric constant to environmental stress and further suppress the dielectric loss at high frequencies. Further, the dopant (such as Ho2O3) has been shown to have beneficial effects on the property improvement of bulk BT. In this presentation, effects of the additives such as Ho2O3 and MgO on the crystal structures as well as electrical properties of BT and BST films are discussed.

AB - Ferroelectric oxide thin films with a perovskite structure, such as BaTiO3 (BT), (Ba,Sr)TiO3 (BST), have attracted considerable attention, because of their potential applications in memories, thin film capacitors, and electro-optics. Obtaining thin films with properties approaching bulk forms as well as understanding the formation mechanism of films would contribute general insight into thin film physics and accelerate its practical applications in many devices. This presentation will first show the crystallization behavior of BT film using XRD and thermal analyses techniques. MgO has been reported to add to BST to form a ceramic composite in order to dilute the sensitivity of dielectric constant to environmental stress and further suppress the dielectric loss at high frequencies. Further, the dopant (such as Ho2O3) has been shown to have beneficial effects on the property improvement of bulk BT. In this presentation, effects of the additives such as Ho2O3 and MgO on the crystal structures as well as electrical properties of BT and BST films are discussed.

KW - Crystallization behavior

KW - High-resolution transmission electron microscope (HRTEM)

KW - Leakage current

KW - Sputtering

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T3 - IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006

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BT - IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006

Y2 - 24 April 2006 through 27 April 2006

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Wu CH, Chu JP, Wang SF. Microstructure and electrical properties of sputtered Ba(Sr)TiO₃ films: Dopant and crystal structure effects. In IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006. 2006. p. 422-427. (IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006).