Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

Lung Chien Chen; Chih Hung Hsu; Xiuyu Zhang; Jia Ren Wu

doi:10.1155/2014/959620

Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

Lung Chien Chen
, Chih Hung Hsu
, Xiuyu Zhang
, Jia Ren Wu

Department of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO² and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO² insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

Original language	English
Article number	959620
Journal	International Journal of Photoenergy
Volume	2014
DOIs	https://doi.org/10.1155/2014/959620
State	Published - 2014

Bibliographical note

Publisher Copyright:
© 2014 Lung-Chien Chen et al.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1155/2014/959620

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abstract = "ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.",

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AU - Hsu, Chih Hung

AU - Zhang, Xiuyu

AU - Wu, Jia Ren

PY - 2014

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N2 - ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

AB - ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

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Low-cost ZnO:YAG-based metal-insulator-semiconductor white light-emitting diodes with various insulators

Abstract

Bibliographical note

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