Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes

Lung Chien Chen; Tzu Chieh Hsu; Meng Chyi Wu

doi:10.1016/S0038-1101(98)00336-0

Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs_0.69P_0.31 substrates with application to visible light-emitting diodes

Lung Chien Chen
, Tzu Chieh Hsu
, Meng Chyi Wu

Department of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Good-quality In_0.37Ga_0.63P and In_0.2Ga_0.8As_0.27P_0.73 layers lattice-matched to GaAs_0.69P_0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undoped layer with a low electron concentration of 3 × 10¹⁶ cm^-3 for In_0.37Ga_0.63P and 2 × 10¹⁶ cm^-3 for In_0.2Ga_0.8As_0.27P_0.73. Photoluminescence (PL) of the undoped, Te- and Zn-doped In_0.37Ga_0.63P and In_0.2Ga_0.8As_0.27P_0.73 layers is described in detail. The emission peaks of 300 and 10 K PL spectra for In_0.37Ga_0.63P and In_0.2Ga_0.8As_0.27P_0.73 are 590 and 568 nm and 639 and 615 nm, respectively. The visible light-emitting diodes (LEDs) employing In_0.37Ga_0.63P/In_0.2Ga_0.8As_0.27P_0.73/ In_0.37Ga_0.63P double heterostructure grown on GaAs_0.69P_0.31 substrates were fabricated. The LEDs exhibit a forward-bias turn-on voltage of 1.6-1.7 V, an ideality factor of approx. 2.0, an emission wavelength of approx. 670 nm and an external quantum efficiency of 0.20% at 60 mA.

Original language	English
Pages (from-to)	809-814
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(98)00336-0
State	Published - Apr 1999

Bibliographical note

Funding Information:
The study is supported by the National Science Council under Contract No. NSC88-2215-E-007-004.

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10.1016/S0038-1101(98)00336-0

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@article{e32c2d47e47244b69ada79977b973656,

title = "Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes",

abstract = "Good-quality In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers lattice-matched to GaAs0.69P0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undoped layer with a low electron concentration of 3 × 1016 cm-3 for In0.37Ga0.63P and 2 × 1016 cm-3 for In0.2Ga0.8As0.27P0.73. Photoluminescence (PL) of the undoped, Te- and Zn-doped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers is described in detail. The emission peaks of 300 and 10 K PL spectra for In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 are 590 and 568 nm and 639 and 615 nm, respectively. The visible light-emitting diodes (LEDs) employing In0.37Ga0.63P/In0.2Ga0.8As0.27P0.73/ In0.37Ga0.63P double heterostructure grown on GaAs0.69P0.31 substrates were fabricated. The LEDs exhibit a forward-bias turn-on voltage of 1.6-1.7 V, an ideality factor of approx. 2.0, an emission wavelength of approx. 670 nm and an external quantum efficiency of 0.20\% at 60 mA.",

author = "Chen, \{Lung Chien\} and Hsu, \{Tzu Chieh\} and Wu, \{Meng Chyi\}",

note = "Funding Information: The study is supported by the National Science Council under Contract No. NSC88-2215-E-007-004.",

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T1 - Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes

AU - Chen, Lung Chien

AU - Hsu, Tzu Chieh

AU - Wu, Meng Chyi

N1 - Funding Information: The study is supported by the National Science Council under Contract No. NSC88-2215-E-007-004.

PY - 1999/4

Y1 - 1999/4

N2 - Good-quality In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers lattice-matched to GaAs0.69P0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undoped layer with a low electron concentration of 3 × 1016 cm-3 for In0.37Ga0.63P and 2 × 1016 cm-3 for In0.2Ga0.8As0.27P0.73. Photoluminescence (PL) of the undoped, Te- and Zn-doped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers is described in detail. The emission peaks of 300 and 10 K PL spectra for In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 are 590 and 568 nm and 639 and 615 nm, respectively. The visible light-emitting diodes (LEDs) employing In0.37Ga0.63P/In0.2Ga0.8As0.27P0.73/ In0.37Ga0.63P double heterostructure grown on GaAs0.69P0.31 substrates were fabricated. The LEDs exhibit a forward-bias turn-on voltage of 1.6-1.7 V, an ideality factor of approx. 2.0, an emission wavelength of approx. 670 nm and an external quantum efficiency of 0.20% at 60 mA.

AB - Good-quality In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers lattice-matched to GaAs0.69P0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undoped layer with a low electron concentration of 3 × 1016 cm-3 for In0.37Ga0.63P and 2 × 1016 cm-3 for In0.2Ga0.8As0.27P0.73. Photoluminescence (PL) of the undoped, Te- and Zn-doped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers is described in detail. The emission peaks of 300 and 10 K PL spectra for In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 are 590 and 568 nm and 639 and 615 nm, respectively. The visible light-emitting diodes (LEDs) employing In0.37Ga0.63P/In0.2Ga0.8As0.27P0.73/ In0.37Ga0.63P double heterostructure grown on GaAs0.69P0.31 substrates were fabricated. The LEDs exhibit a forward-bias turn-on voltage of 1.6-1.7 V, an ideality factor of approx. 2.0, an emission wavelength of approx. 670 nm and an external quantum efficiency of 0.20% at 60 mA.

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ER -

Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs_0.69P_0.31 substrates with application to visible light-emitting diodes

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