Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Chi Da Yang; Chong Long Ho; Ming Yuan Wu; Juh Yuh Su; Wen Jeng Ho; Meng Chyi Wu

doi:10.1016/S0038-1101(03)00130-8

Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Chi Da Yang
, Chong Long Ho
, Ming Yuan Wu
, Juh Yuh Su
, Wen Jeng Ho
, Meng Chyi Wu

Department of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

Original language	English
Pages (from-to)	1763-1767
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(03)00130-8
State	Published - Oct 2003

Bibliographical note

Funding Information:
The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.

Keywords

Distributed bragg reflector (DBR)
Epitaxial lift-off (ELO)
InGaAs p-i-n photodiode

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10.1016/S0038-1101(03)00130-8

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title = "Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors",

abstract = "We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.",

keywords = "Distributed bragg reflector (DBR), Epitaxial lift-off (ELO), InGaAs p-i-n photodiode",

author = "Yang, \{Chi Da\} and Ho, \{Chong Long\} and Wu, \{Ming Yuan\} and Su, \{Juh Yuh\} and Ho, \{Wen Jeng\} and Wu, \{Meng Chyi\}",

note = "Funding Information: The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.",

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T1 - Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

AU - Yang, Chi Da

AU - Ho, Chong Long

AU - Wu, Ming Yuan

AU - Su, Juh Yuh

AU - Ho, Wen Jeng

AU - Wu, Meng Chyi

N1 - Funding Information: The financial support from National Science Council (NSC 91-2215-E-007-013) and Photonic Technology Research, Telecommunication Laboratories, Chunghwa Telecom Company, Ltd., is appreciated.

PY - 2003/10

Y1 - 2003/10

N2 - We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

AB - We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique.

KW - Distributed bragg reflector (DBR)

KW - Epitaxial lift-off (ELO)

KW - InGaAs p-i-n photodiode

UR - https://www.scopus.com/pages/publications/0043095292

U2 - 10.1016/S0038-1101(03)00130-8

DO - 10.1016/S0038-1101(03)00130-8

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AN - SCOPUS:0043095292

SN - 0038-1101

VL - 47

SP - 1763

EP - 1767

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Abstract

Bibliographical note

Keywords

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