Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu; Chun Hu Cheng; Chia Chi Fan; Po Chun Chen; Chun Yen Chang; Min Hung Lee; Chien Liu; Shiang Shiou Yen; Hsiao Hsuan Hsu

doi:10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu
, Chun Hu Cheng
, Chia Chi Fan
, Po Chun Chen
, Chun Yen Chang
, Min Hung Lee
, Chien Liu
, Shiang Shiou Yen
, Hsiao Hsuan Hsu

Department of Materials and Mineral Resources Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A nearly ideal subthreshold slope (SS_min ∼58mV/dec) and an ultralow off-state current of 10^-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔV_T window during endurance cycling may be affected by interface polarization fluctuation.

Original language	English
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	41-42
Number of pages	2
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175543
State	Published - 3 Aug 2015
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 21 Jun 2015 → 24 Jun 2015

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2015-August
ISSN (Print)	1548-3770

Conference

Conference	73rd Annual Device Research Conference, DRC 2015
Country/Territory	United States
City	Columbus
Period	21/06/15 → 24/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Clocks
Fluctuations
High K dielectric materials
Logic gates
Switches
Transistors

Access to Document

10.1109/DRC.2015.7175543

Cite this

Chiu, Y. C., Cheng, C. H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M. H., Liu, C., Yen, S. S., & Hsu, H. H. (2015). Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015 (pp. 41-42). Article 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175543

Chiu, Yu Chien ; Cheng, Chun Hu ; Fan, Chia Chi et al. / Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 41-42 (Device Research Conference - Conference Digest, DRC).

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title = "Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope",

abstract = "A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.",

keywords = "Clocks, Fluctuations, High K dielectric materials, Logic gates, Switches, Transistors",

author = "Chiu, \{Yu Chien\} and Cheng, \{Chun Hu\} and Fan, \{Chia Chi\} and Chen, \{Po Chun\} and Chang, \{Chun Yen\} and Lee, \{Min Hung\} and Chien Liu and Yen, \{Shiang Shiou\} and Hsu, \{Hsiao Hsuan\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",

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doi = "10.1109/DRC.2015.7175543",

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series = "Device Research Conference - Conference Digest, DRC",

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Chiu, YC, Cheng, CH, Fan, CC, Chen, PC, Chang, CY, Lee, MH, Liu, C, Yen, SS & Hsu, HH 2015, Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. in 73rd Annual Device Research Conference, DRC 2015., 7175543, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 41-42, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 21/06/15. https://doi.org/10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. / Chiu, Yu Chien; Cheng, Chun Hu; Fan, Chia Chi et al.
73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 41-42 7175543 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chiu, Yu Chien

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Chen, Po Chun

AU - Chang, Chun Yen

AU - Lee, Min Hung

AU - Liu, Chien

AU - Yen, Shiang Shiou

AU - Hsu, Hsiao Hsuan

PY - 2015/8/3

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N2 - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

AB - A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

KW - Clocks

KW - Fluctuations

KW - High K dielectric materials

KW - Logic gates

KW - Switches

KW - Transistors

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 73rd Annual Device Research Conference, DRC 2015

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ER -

Chiu YC, Cheng CH, Fan CC, Chen PC, Chang CY, Lee MH et al. Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 41-42. 7175543. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2015.7175543

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

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