Growth and characteristics of gasb nanowires by catalysis-free ultrasonic spray pyrolysis

Lung Chien Chen; Kai Ching Cheng

doi:10.1149/1.3582931

Growth and characteristics of gasb nanowires by catalysis-free ultrasonic spray pyrolysis

Lung Chien Chen
, Kai Ching Cheng

Department of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study investigated the growth and characterization of gallium antimonide (GaSb) nanowires produced on sapphire substrates by catalysis-free ultrasonic spray pyrolysis. GaSb nanowires were obtained at deposition temperatures of 500 and 600C. The GaSb nanowires have an absorption edge at around 1.25 eV. The GaSb nanowires deposited at 500C had better transmittance at the high-energy region with wavelengths ∼ 950 nm. An XRD peak was observed at 2 angles of 32.62, and it is considered to be associated with the GaSb (002) orientation based on linear fitting.

Original language	English
Pages (from-to)	H288-H290
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1149/1.3582931
State	Published - 2011

Access to Document

10.1149/1.3582931

Cite this

@article{3adc09c8d23d45dab5d46fa8fddcd47e,

title = "Growth and characteristics of gasb nanowires by catalysis-free ultrasonic spray pyrolysis",

abstract = "This study investigated the growth and characterization of gallium antimonide (GaSb) nanowires produced on sapphire substrates by catalysis-free ultrasonic spray pyrolysis. GaSb nanowires were obtained at deposition temperatures of 500 and 600C. The GaSb nanowires have an absorption edge at around 1.25 eV. The GaSb nanowires deposited at 500C had better transmittance at the high-energy region with wavelengths ∼ 950 nm. An XRD peak was observed at 2 angles of 32.62, and it is considered to be associated with the GaSb (002) orientation based on linear fitting.",

author = "Chen, \{Lung Chien\} and Cheng, \{Kai Ching\}",

year = "2011",

doi = "10.1149/1.3582931",

language = "???core.languages.en\_GB???",

volume = "14",

pages = "H288--H290",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "7",

}

TY - JOUR

T1 - Growth and characteristics of gasb nanowires by catalysis-free ultrasonic spray pyrolysis

AU - Chen, Lung Chien

AU - Cheng, Kai Ching

PY - 2011

Y1 - 2011

N2 - This study investigated the growth and characterization of gallium antimonide (GaSb) nanowires produced on sapphire substrates by catalysis-free ultrasonic spray pyrolysis. GaSb nanowires were obtained at deposition temperatures of 500 and 600C. The GaSb nanowires have an absorption edge at around 1.25 eV. The GaSb nanowires deposited at 500C had better transmittance at the high-energy region with wavelengths ∼ 950 nm. An XRD peak was observed at 2 angles of 32.62, and it is considered to be associated with the GaSb (002) orientation based on linear fitting.

AB - This study investigated the growth and characterization of gallium antimonide (GaSb) nanowires produced on sapphire substrates by catalysis-free ultrasonic spray pyrolysis. GaSb nanowires were obtained at deposition temperatures of 500 and 600C. The GaSb nanowires have an absorption edge at around 1.25 eV. The GaSb nanowires deposited at 500C had better transmittance at the high-energy region with wavelengths ∼ 950 nm. An XRD peak was observed at 2 angles of 32.62, and it is considered to be associated with the GaSb (002) orientation based on linear fitting.

UR - https://www.scopus.com/pages/publications/79959570193

U2 - 10.1149/1.3582931

DO - 10.1149/1.3582931

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:79959570193

SN - 1099-0062

VL - 14

SP - H288-H290

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Growth and characteristics of gasb nanowires by catalysis-free ultrasonic spray pyrolysis

Abstract

Access to Document

Other files and links

Fingerprint

Cite this