TY - GEN
T1 - Grain growth of zinc oxide films on quartz GlassTreated in N 2/O2 atmosphere using microwave plasma jet sintering system
AU - Su, Chun Hsi
AU - Huang, Chia Min
PY - 2010
Y1 - 2010
N2 - Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on quartz substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately 50% N2/50% O2 with a 10 sccm gas flow rate for a process pressure of 35 Torr and 1200W applied power. Optical emission spectroscopic (OES) studies of N2/O2 microwave plasmas, the average gas temperature of the plasma to be 1809 K. X-ray diffraction (XRD), Micro-Raman, FE-SEM and UV-Vis spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. Intensity of diffraction peak for (101)-plane of ZnO films increases with increasing treated times in MPJSS. The highest measured regular optical transmittance of the ZnO films treated was 20% at 580-730 nm (including quartz absorption), whereas that of the ZnO films no-treated was 5% at 200-800nm (including quartz absorption).
AB - Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on quartz substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately 50% N2/50% O2 with a 10 sccm gas flow rate for a process pressure of 35 Torr and 1200W applied power. Optical emission spectroscopic (OES) studies of N2/O2 microwave plasmas, the average gas temperature of the plasma to be 1809 K. X-ray diffraction (XRD), Micro-Raman, FE-SEM and UV-Vis spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. Intensity of diffraction peak for (101)-plane of ZnO films increases with increasing treated times in MPJSS. The highest measured regular optical transmittance of the ZnO films treated was 20% at 580-730 nm (including quartz absorption), whereas that of the ZnO films no-treated was 5% at 200-800nm (including quartz absorption).
UR - https://www.scopus.com/pages/publications/79956036394
U2 - 10.1109/NANOMED.2010.5749836
DO - 10.1109/NANOMED.2010.5749836
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AN - SCOPUS:79956036394
SN - 9781612841533
T3 - 2010 IEEE International Conference on Nano/Molecular Medicine and Engineering, IEEE NANOMED 2010
SP - 209
EP - 213
BT - 2010 IEEE International Conference on Nano/Molecular Medicine and Engineering, IEEE NANOMED 2010
T2 - 4th IEEE International Conference on Nano/Molecular Medicine and Engineering, IEEE NANOMED 2010
Y2 - 5 December 2010 through 9 December 2010
ER -