Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications

Cho Chun Chiang; Wen Jeng Ho; Jheng Jie Liu; Shih Ting Tseng; Jian Nan Lin; June Yan Chen; Hao Xiang Zhang

doi:10.1109/ISNE.2018.8394752

Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications

Cho Chun Chiang
, Wen Jeng Ho
, Jheng Jie Liu
, Shih Ting Tseng
, Jian Nan Lin
, June Yan Chen
, Hao Xiang Zhang

Department of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, a planar-type top-illuminated high-responsivity InP-based avalanche photodetector (APD) was fabricated and characterized. The dark current of 0.55 nA, capacitance of 0.237 pF, responsivity of 12.2 A/W were obtained when APD operated at 0.95 breakdown voltage (V_BR). The eye diagrams of the fabricated APD under 0.95 V_BR to the pseudorandom NRZ code of length 2³¹-1 at 2.5-10 Gb/s were measured. The absence of significant intersymbol interference and the error free for the signals up to 10 Gb/s can be achieved.

Original language	English
Title of host publication	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538614457
DOIs	https://doi.org/10.1109/ISNE.2018.8394752
State	Published - 22 Jun 2018
Event	7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan Duration: 7 May 2018 → 9 May 2018

Publication series

Name	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference	7th International Symposium on Next-Generation Electronics, ISNE 2018
Country/Territory	Taiwan
City	Taipei
Period	7/05/18 → 9/05/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

InP-based
avalanche photodetector
eye diagrams
high responsivity

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10.1109/ISNE.2018.8394752

Cite this

Chiang, C. C., Ho, W. J., Liu, J. J., Tseng, S. T., Lin, J. N., Chen, J. Y., & Zhang, H. X. (2018). Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-4). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394752

Chiang, Cho Chun ; Ho, Wen Jeng ; Liu, Jheng Jie et al. / Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

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title = "Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications",

abstract = "In this work, a planar-type top-illuminated high-responsivity InP-based avalanche photodetector (APD) was fabricated and characterized. The dark current of 0.55 nA, capacitance of 0.237 pF, responsivity of 12.2 A/W were obtained when APD operated at 0.95 breakdown voltage (VBR). The eye diagrams of the fabricated APD under 0.95 VBR to the pseudorandom NRZ code of length 231-1 at 2.5-10 Gb/s were measured. The absence of significant intersymbol interference and the error free for the signals up to 10 Gb/s can be achieved.",

keywords = "InP-based, avalanche photodetector, eye diagrams, high responsivity",

author = "Chiang, \{Cho Chun\} and Ho, \{Wen Jeng\} and Liu, \{Jheng Jie\} and Tseng, \{Shih Ting\} and Lin, \{Jian Nan\} and Chen, \{June Yan\} and Zhang, \{Hao Xiang\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",

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Chiang, CC, Ho, WJ, Liu, JJ, Tseng, ST, Lin, JN, Chen, JY & Zhang, HX 2018, Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 7/05/18. https://doi.org/10.1109/ISNE.2018.8394752

Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications. / Chiang, Cho Chun; Ho, Wen Jeng; Liu, Jheng Jie et al.
Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tseng, Shih Ting

AU - Lin, Jian Nan

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AB - In this work, a planar-type top-illuminated high-responsivity InP-based avalanche photodetector (APD) was fabricated and characterized. The dark current of 0.55 nA, capacitance of 0.237 pF, responsivity of 12.2 A/W were obtained when APD operated at 0.95 breakdown voltage (VBR). The eye diagrams of the fabricated APD under 0.95 VBR to the pseudorandom NRZ code of length 231-1 at 2.5-10 Gb/s were measured. The absence of significant intersymbol interference and the error free for the signals up to 10 Gb/s can be achieved.

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Chiang CC, Ho WJ, Liu JJ, Tseng ST, Lin JN, Chen JY et al. Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). doi: 10.1109/ISNE.2018.8394752

Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications

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