Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

Jian Cheng Lin; Wen Jeng Ho; Wen Bin Bai; Jheng Jie Liu; Hung Pin Shiao

doi:10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

Jian Cheng Lin
, Wen Jeng Ho
, Wen Bin Bai
, Jheng Jie Liu
, Hung Pin Shiao

Department of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO₂ ARC.

Original language	English
Title of host publication	Proceedings of the 2017 IEEE International Conference on Applied System Innovation
Subtitle of host publication	Applied System Innovation for Modern Technology, ICASI 2017
Editors	Teen-Hang Meen, Artde Donald Kin-Tak Lam, Stephen D. Prior
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1805-1807
Number of pages	3
ISBN (Electronic)	9781509048977
DOIs	https://doi.org/10.1109/ICASI.2017.7988294
State	Published - 21 Jul 2017
Event	2017 IEEE International Conference on Applied System Innovation, ICASI 2017 - Sapporo, Japan Duration: 13 May 2017 → 17 May 2017

Publication series

Name	Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017

Conference

Conference	2017 IEEE International Conference on Applied System Innovation, ICASI 2017
Country/Territory	Japan
City	Sapporo
Period	13/05/17 → 17/05/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

Antireflection-coating (ARC)
GaAs solar cell
High efficiency
Indium-Tin-oxide (ITO)
Passivation

Access to Document

10.1109/ICASI.2017.7988294

Cite this

Lin, J. C., Ho, W. J., Bai, W. B., Liu, J. J., & Shiao, H. P. (2017). Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. In T.-H. Meen, A. D. K.-T. Lam, & S. D. Prior (Eds.), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017 (pp. 1805-1807). Article 7988294 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICASI.2017.7988294

Lin, Jian Cheng ; Ho, Wen Jeng ; Bai, Wen Bin et al. / Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. editor / Teen-Hang Meen ; Artde Donald Kin-Tak Lam ; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1805-1807 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

@inproceedings{7e88468711284baaadcb1b7e8b1a34fb,

title = "Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell",

abstract = "The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52\% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92\% for the GaAs cell with SiO2 ARC.",

keywords = "Antireflection-coating (ARC), GaAs solar cell, High efficiency, Indium-Tin-oxide (ITO), Passivation",

author = "Lin, \{Jian Cheng\} and Ho, \{Wen Jeng\} and Bai, \{Wen Bin\} and Liu, \{Jheng Jie\} and Shiao, \{Hung Pin\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Conference on Applied System Innovation, ICASI 2017 ; Conference date: 13-05-2017 Through 17-05-2017",

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Lin, JC, Ho, WJ, Bai, WB, Liu, JJ & Shiao, HP 2017, Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. in T-H Meen, ADK-T Lam & SD Prior (eds), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017., 7988294, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1805-1807, 2017 IEEE International Conference on Applied System Innovation, ICASI 2017, Sapporo, Japan, 13/05/17. https://doi.org/10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. / Lin, Jian Cheng; Ho, Wen Jeng; Bai, Wen Bin et al.
Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. ed. / Teen-Hang Meen; Artde Donald Kin-Tak Lam; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1805-1807 7988294 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

AU - Lin, Jian Cheng

AU - Ho, Wen Jeng

AU - Bai, Wen Bin

AU - Liu, Jheng Jie

AU - Shiao, Hung Pin

PY - 2017/7/21

Y1 - 2017/7/21

N2 - The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO2 ARC.

AB - The thermally deposited indium-Tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO2 ARC.

KW - Antireflection-coating (ARC)

KW - GaAs solar cell

KW - High efficiency

KW - Indium-Tin-oxide (ITO)

KW - Passivation

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BT - Proceedings of the 2017 IEEE International Conference on Applied System Innovation

A2 - Meen, Teen-Hang

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A2 - Prior, Stephen D.

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Lin JC, Ho WJ, Bai WB, Liu JJ, Shiao HP. Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell. In Meen TH, Lam ADKT, Prior SD, editors, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1805-1807. 7988294. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). doi: 10.1109/ICASI.2017.7988294

Electrical and optical characterization of thermally deposited indium-Tin-oxide film on high efficiency single-junction GaAs solar cell

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