Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes

P. H. Lei; C. D. Yang; Z. B. Wang; C. C. Lin; W. J. Ho; M. C. Wu

doi:10.1049/ip-opt:20030359

Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes

P. H. Lei
, C. D. Yang
, Z. B. Wang
, C. C. Lin
, W. J. Ho
, M. C. Wu

Department of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effect is investigated of introducing a linearly graded-index separate-confinement-heterostructure InGaAsP intermediate layer between the InGaAs cap layer and the InP cladding layer to improve the characteristics of 1.3 μm AlGaInAs strain-compensated multiple-quantum-well laser diodes (LDs). With the InGaAsP intermediate layer, 3 μm-ridge-strip LDs without facet coating under CW operation exhibit a threshold current of 16mA, a resistance of 5.8 Ω, a characteristic temperature of 75 K in the range 20-70°C and 41 K at 70-100°C, a differential quantum efficiency of 50% and a low slope efficiency drop of -1.3 dB between 20 and 70°C. These characteristics are better than those of LDs without the InGaAsP intermediate layer. A wavelength swing of 0.48 nm/°C for LDs operated at 50 mA is achieved.

Original language	English
Pages (from-to)	541-544
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	150
Issue number	6
DOIs	https://doi.org/10.1049/ip-opt:20030359
State	Published - Dec 2003

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title = "Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes",

abstract = "The effect is investigated of introducing a linearly graded-index separate-confinement-heterostructure InGaAsP intermediate layer between the InGaAs cap layer and the InP cladding layer to improve the characteristics of 1.3 μm AlGaInAs strain-compensated multiple-quantum-well laser diodes (LDs). With the InGaAsP intermediate layer, 3 μm-ridge-strip LDs without facet coating under CW operation exhibit a threshold current of 16mA, a resistance of 5.8 Ω, a characteristic temperature of 75 K in the range 20-70°C and 41 K at 70-100°C, a differential quantum efficiency of 50\% and a low slope efficiency drop of -1.3 dB between 20 and 70°C. These characteristics are better than those of LDs without the InGaAsP intermediate layer. A wavelength swing of 0.48 nm/°C for LDs operated at 50 mA is achieved.",

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T1 - Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes

AU - Lei, P. H.

AU - Yang, C. D.

AU - Wang, Z. B.

AU - Lin, C. C.

AU - Ho, W. J.

AU - Wu, M. C.

PY - 2003/12

Y1 - 2003/12

N2 - The effect is investigated of introducing a linearly graded-index separate-confinement-heterostructure InGaAsP intermediate layer between the InGaAs cap layer and the InP cladding layer to improve the characteristics of 1.3 μm AlGaInAs strain-compensated multiple-quantum-well laser diodes (LDs). With the InGaAsP intermediate layer, 3 μm-ridge-strip LDs without facet coating under CW operation exhibit a threshold current of 16mA, a resistance of 5.8 Ω, a characteristic temperature of 75 K in the range 20-70°C and 41 K at 70-100°C, a differential quantum efficiency of 50% and a low slope efficiency drop of -1.3 dB between 20 and 70°C. These characteristics are better than those of LDs without the InGaAsP intermediate layer. A wavelength swing of 0.48 nm/°C for LDs operated at 50 mA is achieved.

AB - The effect is investigated of introducing a linearly graded-index separate-confinement-heterostructure InGaAsP intermediate layer between the InGaAs cap layer and the InP cladding layer to improve the characteristics of 1.3 μm AlGaInAs strain-compensated multiple-quantum-well laser diodes (LDs). With the InGaAsP intermediate layer, 3 μm-ridge-strip LDs without facet coating under CW operation exhibit a threshold current of 16mA, a resistance of 5.8 Ω, a characteristic temperature of 75 K in the range 20-70°C and 41 K at 70-100°C, a differential quantum efficiency of 50% and a low slope efficiency drop of -1.3 dB between 20 and 70°C. These characteristics are better than those of LDs without the InGaAsP intermediate layer. A wavelength swing of 0.48 nm/°C for LDs operated at 50 mA is achieved.

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JO - IEE Proceedings: Optoelectronics

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ER -

Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes

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