Design and simulation of A 2 × 2N SOI optical power splitter

A 2 × 2N optical power splitter is designed on a two-layer silicon-on-insulator (SOI) wafer that offers the flexible design of the optical power-splitting ratio. The lateral power-splitting ratio is designed by adjusting the multimode interference region. The vertical power-splitting ratio is designed by varying the gap distance between the two SOI layers. We use the beam propagation method to simulate the light propagation in such a two-layer optical waveguide. The total insertion loss 1.01 dB of a 2 × 32 optical power splitter with 0.2 mm × 8.7 mm size is demonstrated by beam propagation simulations.