Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing

Wen Jeng Ho; Min Chun Huang; Yi Yu Lee; Zhong Fu Hou; Jian Jyun Liao

doi:10.1109/INEC.2014.7460324

Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing

Wen Jeng Ho
, Min Chun Huang
, Yi Yu Lee
, Zhong Fu Hou
, Jian Jyun Liao

Department of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO₂ and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460324
State	Published - 26 Apr 2016
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 28 Jul 2014 → 31 Jul 2014

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	28/07/14 → 31/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

ITO electrode
MOS-structure solar cell
conversion efficiency
photovoltaic
voltage biasing

Access to Document

10.1109/INEC.2014.7460324

Cite this

Ho, W. J., Huang, M. C., Lee, Y. Y., Hou, Z. F., & Liao, J. J. (2016). Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460324 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460324

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abstract = "The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80\%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06\% to 19.68\% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.",

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Ho, WJ, Huang, MC, Lee, YY, Hou, ZF & Liao, JJ 2016, Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460324, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 28/07/14. https://doi.org/10.1109/INEC.2014.7460324

Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. / Ho, Wen Jeng; Huang, Min Chun; Lee, Yi Yu et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460324 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Ho WJ, Huang MC, Lee YY, Hou ZF, Liao JJ. Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO₂ space layer at 4V biasing. In 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460324. (2014 IEEE International Nanoelectronics Conference, INEC 2014). doi: 10.1109/INEC.2014.7460324