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Capacity-independent address mapping for flash storage devices with explosively growing capacity

  • Ming Chang Yang
  • , Yuan Hao Chang
  • , Tei Wei Kuo
  • , Po Chun Huang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Address mapping for flash storage devices has been a challenging design issue for controllers because of rapidly growing device capacity. In contrast with existing mapping methods, this study proposes a capacity-independent address mapping method to decouple the required on-device RAM space from the capacity of a flash storage device. Especially, the required RAM size of the proposed method depends only on the user accessed data set, which is also referred to as the working set, while the page-level performance can be nearly achieved. In addition, a simple but practical wear-leveling design is proposed with the capability in lifetime estimation of flash storage devices. Experiments of the proposed scheme obtained encouraging results.

Original languageEnglish
Article number7100860
Pages (from-to)448-465
Number of pages18
JournalIEEE Transactions on Computers
Volume65
Issue number2
DOIs
StatePublished - 1 Feb 2016

Bibliographical note

Publisher Copyright:
© 1968-2012 IEEE.

Keywords

  • Flash memory
  • MLC
  • March operation
  • address mapping
  • flash storage device
  • garbage collection
  • solid-state drive
  • storage systems
  • working set

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