Adhesion studies of low-k silsesquioxane

Yao Yi Cheng; Jiuq Yi Kan; I. Shun Lin

doi:10.1016/j.tsf.2004.05.085

Adhesion studies of low-k silsesquioxane

Yao Yi Cheng
, Jiuq Yi Kan
, I. Shun Lin

Department of Molecular Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

As the dimension of IC devices continues to shrink, interconnection delay becomes a limiting factor to increase device speed. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. In this work, two kinds of low-k silisesquioxane have been investigated: Methylsilsesquioxane (MSQ) and Hydrogen silisesquioxane (HSQ). The adhesion between silicon nitride (Si ₃N₄) and low-k MSQ or HSQ has been examined. The adhesion strength can be improved by various plasma treatments on top of the silisesquioxane. The adhesion strength between MSQ and Si₃N ₄ can be increased by NH3 or H2 plasma treatment. On the other hand, the adhesion strength between HSQ and Si₃N₄ is only increased by NH3 treatment effectively. Surface properties and electrical characterization of low-k silisesquioxane have also been examined after various plasma treatments.

Original language	English
Pages (from-to)	297-301
Number of pages	5
Journal	Thin Solid Films
Volume	462-463
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.05.085
State	Published - Sep 2004

Bibliographical note

Funding Information:
The authors would like to thank the National Science Council of Taiwan, R.O.C. (NSC-90-2216-E-027-006), for the financial support of this project. We would also like to thank Dr. Shiow-Huey Chuang and National Nano Device Laboratory for providing valuable help, and Dow Corning Inc. for providing HSQ solution.

Keywords

Adhesion strength
Low-k
Plasma
Silsesquioxane

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10.1016/j.tsf.2004.05.085

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@article{ed8b4b744f5a49779228d230aa7764ee,

title = "Adhesion studies of low-k silsesquioxane",

abstract = "As the dimension of IC devices continues to shrink, interconnection delay becomes a limiting factor to increase device speed. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. In this work, two kinds of low-k silisesquioxane have been investigated: Methylsilsesquioxane (MSQ) and Hydrogen silisesquioxane (HSQ). The adhesion between silicon nitride (Si 3N4) and low-k MSQ or HSQ has been examined. The adhesion strength can be improved by various plasma treatments on top of the silisesquioxane. The adhesion strength between MSQ and Si3N 4 can be increased by NH3 or H2 plasma treatment. On the other hand, the adhesion strength between HSQ and Si3N4 is only increased by NH3 treatment effectively. Surface properties and electrical characterization of low-k silisesquioxane have also been examined after various plasma treatments.",

keywords = "Adhesion strength, Low-k, Plasma, Silsesquioxane",

author = "Cheng, \{Yao Yi\} and Kan, \{Jiuq Yi\} and Lin, \{I. Shun\}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan, R.O.C. (NSC-90-2216-E-027-006), for the financial support of this project. We would also like to thank Dr. Shiow-Huey Chuang and National Nano Device Laboratory for providing valuable help, and Dow Corning Inc. for providing HSQ solution.",

year = "2004",

month = sep,

doi = "10.1016/j.tsf.2004.05.085",

language = "???core.languages.en\_GB???",

volume = "462-463",

pages = "297--301",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Adhesion studies of low-k silsesquioxane

AU - Cheng, Yao Yi

AU - Kan, Jiuq Yi

AU - Lin, I. Shun

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan, R.O.C. (NSC-90-2216-E-027-006), for the financial support of this project. We would also like to thank Dr. Shiow-Huey Chuang and National Nano Device Laboratory for providing valuable help, and Dow Corning Inc. for providing HSQ solution.

PY - 2004/9

Y1 - 2004/9

N2 - As the dimension of IC devices continues to shrink, interconnection delay becomes a limiting factor to increase device speed. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. In this work, two kinds of low-k silisesquioxane have been investigated: Methylsilsesquioxane (MSQ) and Hydrogen silisesquioxane (HSQ). The adhesion between silicon nitride (Si 3N4) and low-k MSQ or HSQ has been examined. The adhesion strength can be improved by various plasma treatments on top of the silisesquioxane. The adhesion strength between MSQ and Si3N 4 can be increased by NH3 or H2 plasma treatment. On the other hand, the adhesion strength between HSQ and Si3N4 is only increased by NH3 treatment effectively. Surface properties and electrical characterization of low-k silisesquioxane have also been examined after various plasma treatments.

AB - As the dimension of IC devices continues to shrink, interconnection delay becomes a limiting factor to increase device speed. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. In this work, two kinds of low-k silisesquioxane have been investigated: Methylsilsesquioxane (MSQ) and Hydrogen silisesquioxane (HSQ). The adhesion between silicon nitride (Si 3N4) and low-k MSQ or HSQ has been examined. The adhesion strength can be improved by various plasma treatments on top of the silisesquioxane. The adhesion strength between MSQ and Si3N 4 can be increased by NH3 or H2 plasma treatment. On the other hand, the adhesion strength between HSQ and Si3N4 is only increased by NH3 treatment effectively. Surface properties and electrical characterization of low-k silisesquioxane have also been examined after various plasma treatments.

KW - Adhesion strength

KW - Low-k

KW - Plasma

KW - Silsesquioxane

UR - https://www.scopus.com/pages/publications/4344687531

U2 - 10.1016/j.tsf.2004.05.085

DO - 10.1016/j.tsf.2004.05.085

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:4344687531

SN - 0040-6090

VL - 462-463

SP - 297

EP - 301

JO - Thin Solid Films

JF - Thin Solid Films

IS - SPEC. ISS.

ER -

Adhesion studies of low-k silsesquioxane

Abstract

Bibliographical note

Keywords

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