Abstract
Recently, the rapid development of modern nonvolatile memories (NVMs) have renovated the designs of computing systems. However, the unique characteristics of NVMs often degrade the performance, reliability, or lifetime of existing designs of the memory-storage subsystem. In particular, the slow write performance and high write energy of many NVMs inspired many research proposals that aim to reduce the NVM write traffic, such as the differential write technique. On the other hand, some NVMs have write disturbance problem, and an NVM cell might be erroneously changed when its neighboring NVM cells are programmed. Although the differential write technique is proven effective in reducing the NVM write traffic, the write disturbance problem might be considerably exacerbated due to the selective random updates to the cells in a machine word, thereby affecting the reliability of data. In this work, we discuss the potential techniques that alleviate write disturbance problem while still providing good perfor-mance/energy of write operations to an NVM-based buffer cache.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2019 8th International Conference on Innovation, Communication and Engineering, ICICE 2019 |
| Editors | Shoou-Jinn Chang, Sheng-Joue Young, Artde Donald Kin-Tak Lam, Liang-Wen Ji, Hao-Ying Lu, Stephen D. Prior |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 10-13 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781728158396 |
| DOIs | |
| State | Published - Oct 2019 |
| Event | 8th International Conference on Innovation, Communication and Engineering, ICICE 2019 - Zhengzhou, Henan Province, China Duration: 25 Oct 2019 → 30 Oct 2019 |
Publication series
| Name | Proceedings of the 2019 8th International Conference on Innovation, Communication and Engineering, ICICE 2019 |
|---|
Conference
| Conference | 8th International Conference on Innovation, Communication and Engineering, ICICE 2019 |
|---|---|
| Country/Territory | China |
| City | Zhengzhou, Henan Province |
| Period | 25/10/19 → 30/10/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
Keywords
- nonvolatile memory (NVM)
- write amplification
- write disturbance
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