A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations

Hao Shun Yang; Yi Jan Emery Chen; Jau Horng Chen

doi:10.1109/MWSYM.2016.7540384

A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations

Hao Shun Yang
, Yi Jan Emery Chen
, Jau Horng Chen

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a wide bandwidth fully integrated CMOS power amplifier (PA) suitable for pulse-mode operation. The CMOS PA was implemented in a 90-nm process with core size of 1 mm2. A pulse-modulated polar transmitter for LTE femtocell applications was constructed with this switching CMOS PA using the aliasing-free digital pulse-width modulation technique. With conventional memoryless digital predistortion, the polar transmitter achieved 23.5% efficiency and 19.5-dBm output power at 2.4 GHz. Moreover, the proposed transmitter can also pass the -45-dBc ACLR requirement over a wide frequency range from the first channel in downlink band-1 to the last channel in downlink band-7 for LTE home femtocell base stations.

Original language	English
Title of host publication	2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006984
DOIs	https://doi.org/10.1109/MWSYM.2016.7540384
State	Published - 9 Aug 2016
Event	2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States Duration: 22 May 2016 → 27 May 2016

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2016-August
ISSN (Print)	0149-645X

Conference

Conference	2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Country/Territory	United States
City	San Francisco
Period	22/05/16 → 27/05/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

femtocell base stations
long term evolution (LTE)
power amplifiers
pulse-width modulation
radio transmitters

Access to Document

10.1109/MWSYM.2016.7540384

Cite this

Yang, H. S., Chen, Y. J. E., & Chen, J. H. (2016). A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 Article 7540384 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2016.7540384

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abstract = "This paper presents a wide bandwidth fully integrated CMOS power amplifier (PA) suitable for pulse-mode operation. The CMOS PA was implemented in a 90-nm process with core size of 1 mm2. A pulse-modulated polar transmitter for LTE femtocell applications was constructed with this switching CMOS PA using the aliasing-free digital pulse-width modulation technique. With conventional memoryless digital predistortion, the polar transmitter achieved 23.5\% efficiency and 19.5-dBm output power at 2.4 GHz. Moreover, the proposed transmitter can also pass the -45-dBc ACLR requirement over a wide frequency range from the first channel in downlink band-1 to the last channel in downlink band-7 for LTE home femtocell base stations.",

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Yang, HS, Chen, YJE & Chen, JH 2016, A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations. in 2016 IEEE MTT-S International Microwave Symposium, IMS 2016., 7540384, IEEE MTT-S International Microwave Symposium Digest, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE MTT-S International Microwave Symposium, IMS 2016, San Francisco, United States, 22/05/16. https://doi.org/10.1109/MWSYM.2016.7540384

A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations. / Yang, Hao Shun; Chen, Yi Jan Emery; Chen, Jau Horng.
2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7540384 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents a wide bandwidth fully integrated CMOS power amplifier (PA) suitable for pulse-mode operation. The CMOS PA was implemented in a 90-nm process with core size of 1 mm2. A pulse-modulated polar transmitter for LTE femtocell applications was constructed with this switching CMOS PA using the aliasing-free digital pulse-width modulation technique. With conventional memoryless digital predistortion, the polar transmitter achieved 23.5% efficiency and 19.5-dBm output power at 2.4 GHz. Moreover, the proposed transmitter can also pass the -45-dBc ACLR requirement over a wide frequency range from the first channel in downlink band-1 to the last channel in downlink band-7 for LTE home femtocell base stations.

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A pulse-mode CMOS power amplifier for multi-band LTE femtocell base stations

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